종자정 부착 시 생성되는 마이크로 기공이 PVT법에 의하여 성장시킨 6H-SiC 결정질에 미치는 영향 = The Micro Bubble Effect in the Seed Adhesion on the Crystal Quality of 6H-SiC grown by a Physical Vapor Transport (PVT) Process

다국어 초록 (Multilingual Abstract)

With different seed adhesion methods, we obtained two different aspects with or without micro-bubble in the interface between a seed and a dense graphite seed holder. To improve the quality of SiC wafer, we introduced a sucrose caramelizing step at the seed adhesion using the sucrose, The n-type 2 inch single crystal exhibiting the polytype of 6H-SiC were successfully fabricated and carrier concentration levels of about $10^{16}/cm^3$ was determined from Hall measurements, As compared to the characteristics of SiC crystal grown with micro-bubble in the interface between the seed and the dense graphite seed holder, the SiC crystal grown without micro-bubble definitely exhibited lower resistivity, lower micropipe density and higher mobility relatively.

참고문헌 (Reference)

1 M.V. Bogdanov, "Virtual reactor as a new tool for modeling and optimization of SiC bulk crystal growth" 225 : 307-, 2001

2 J.G. Kim, "SiC crystal growth by sublimation method with modification of crucible and insulation felt design" 483-485 : 47-, 2005

3 K.R. Ku, "High quality SiC crystal grown physical vapor transport method with new crusible design" 527-529 : 83-, 2006

4 E.K. Sanchez, "Formation of thermal decomposition cavities in physical vapor transport of silicon carbide" 29 : 347-, 2000

5 Y. Kitou, "Flux-controlled sublimation growth by an inner guide-tube" 389-393 : 83-, 2002

6 I.A. Zhmakin, "Evolution of thermoelastic strain and dislocation density during sublimation growth of silicon carbide" 9 : 446-, 2000

7 Z. Herro, "Effective increase of single-crystalline yield during PVT growth of SiC by tailoring of radial temperature gradient" 433-436 : 67-, 2003

8 E. Janzen, "Defects in SiC" 340–342 : 15-, 2003

9 J.C. Zolper, "Advances in silicon carbide electronics" 30 : 273-, 2005

10 X. Ma, "A method to determine superscrew dislocation structure in silicon carbide" 129 : 216-, 2006