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      KCI등재 SCOPUS

      Alumina dummy 충전재를 이용한 GaN 기반 박막재료의 단면 TEM 시편준비 = Cross-sectional TEM Specimen Preparation of GaN-based Thinfilm Materials Using Alumina Dummy Filler

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      https://www.riss.kr/link?id=A101628395

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      다국어 초록 (Multilingual Abstract)

      Practical difficulties for preparing a good crosssectional specimen of GaN-based materials for transmission electron microscopy have arisen due to large difference of mechanical properties between hard ceramic substrate and soft GaN-layered materials....

      Practical difficulties for preparing a good crosssectional specimen of GaN-based materials for transmission electron microscopy have arisen due to large difference of mechanical properties between hard ceramic substrate and soft GaN-layered materials. Uneven polishing, sudden cracking, delamination, and selective sputtering during the conventional wedge polishing technique are often encountered as experimental hindrances. The preparation technique based on Strecker's method can be applied to overcome these difficulties, which eventually leads to mechanically stable TEM samples independent of the mechanical properties of materials. The basic idea is to use hard ceramic dummy filler for embedding the sample of interest into the dummy frame. In this study, we applied this technique into preparing cross-sectional TEM specimen of the GaN-based materials with mechanical instability and demonstrated usefulness of this hard dummy filler method in which the possible modifications of the sample of interest during the preparation must be avoidable. In addition, practical precautions during the preparation were discussed.

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      참고문헌 (Reference)

      1 Mccaffrey JP, "Transmitted color and interference fringes for TEM sample preparation of silicon" 29 : 139-144, 1998

      2 Goodhew PJ, "Thin foil preparation for electron microscopy in : Practical Methods in Electron Microscopy" Elsevier 1985

      3 Newcomb SB, "The preparation of crosssectional TEM specimens" 93 : 43-, 1988

      4 Barna ´A, "TEM sample preparation by ion milling/amorphization" 30 : 267-276, 1999

      5 Strecker A, "Specimen preparation for transmission electron microscopy: Reliable method for cross-sections and brittle materials" 30 : 482-495, 1993

      6 Okuno H, "Sample preparation of GaN-based materials on a sapphire substrate for STEM analysis" 57 : 1-5, 2008

      7 Li J, "Recent advances in FIB-TEM specimen preparation techniques" 57 : 64-70, 2006

      8 Egerton RF, "Radiation damage in the TEM and SEM" 35 : 399-409, 2004

      9 Zilan L, "Preparation of GaN-based cross-sectional TEM specimens by laser lift-off" 36 : 281-284, 2005

      10 Kim YM, "Practical approaches to minimize specimen charging effect in HRTEM" 63-67, 2008

      1 Mccaffrey JP, "Transmitted color and interference fringes for TEM sample preparation of silicon" 29 : 139-144, 1998

      2 Goodhew PJ, "Thin foil preparation for electron microscopy in : Practical Methods in Electron Microscopy" Elsevier 1985

      3 Newcomb SB, "The preparation of crosssectional TEM specimens" 93 : 43-, 1988

      4 Barna ´A, "TEM sample preparation by ion milling/amorphization" 30 : 267-276, 1999

      5 Strecker A, "Specimen preparation for transmission electron microscopy: Reliable method for cross-sections and brittle materials" 30 : 482-495, 1993

      6 Okuno H, "Sample preparation of GaN-based materials on a sapphire substrate for STEM analysis" 57 : 1-5, 2008

      7 Li J, "Recent advances in FIB-TEM specimen preparation techniques" 57 : 64-70, 2006

      8 Egerton RF, "Radiation damage in the TEM and SEM" 35 : 399-409, 2004

      9 Zilan L, "Preparation of GaN-based cross-sectional TEM specimens by laser lift-off" 36 : 281-284, 2005

      10 Kim YM, "Practical approaches to minimize specimen charging effect in HRTEM" 63-67, 2008

      11 Yonenage I, "Hardness of bulk single-crystal GaN and AlN" 7 : 6-, 2002

      12 Drory MD, "Hardness and fracture toughness of bulk single crystal gallium nitride" 69 : 4044-4046, 1996

      13 Nakamura S, "GaN growth using GaN buffer layer" 30 : L1705-L1707, 1991

      14 Weaver L, "Cross-section TEM sample preparation of multilayer and poorly adhering films" 36 : 368-371, 1997

      15 Eberg E, "Comparison of TEM specimen preparation of perovskite thin films by tripod polishing and conventional ion milling" 57 : 175-179, 2008

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      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      2022 평가예정 재인증평가 신청대상 (재인증)
      2019-01-01 평가 등재학술지 선정 (계속평가) KCI등재
      2018-12-01 평가 등재후보로 하락 (계속평가) KCI등재후보
      2015-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2014-03-17 학술지명변경 외국어명 : Korean Journal of Microscopy -> Applied Microscopy KCI등재
      2011-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2009-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2008-09-22 학술지명변경 한글명 : 한국전자현미경학회지 -> 한국현미경학회지
      외국어명 : Korean Journal of Electron Microscopy -> Korean Journal of Microscopy
      KCI등재
      2007-10-24 학회명변경 한글명 : 한국전자현미경학회 -> 한국현미경학회
      영문명 : Korean Society Of Electron Microscopy -> Korean Society Of Microscopy
      KCI등재
      2007-01-01 평가 등재 1차 FAIL (등재유지) KCI등재
      2004-01-01 평가 등재학술지 선정 (등재후보2차) KCI등재
      2003-01-01 평가 등재후보 1차 PASS (등재후보1차) KCI등재후보
      2002-01-01 평가 등재후보학술지 유지 (등재후보1차) KCI등재후보
      1999-01-01 평가 등재후보학술지 선정 (신규평가) KCI등재후보
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      학술지 인용정보

      학술지 인용정보
      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 0.11 0.11 0.12
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.12 0.12 0.273 0
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