BCD Platform과의 집적화에 적합한 고성능 Lateral Super Barrier Rectifier의 연구 = A Study on High Performance Lateral Super Barrier Rectifier for Integration in BCD (Bipolar CMOS DMOS) Platform

다국어 초록 (Multilingual Abstract)

This paper suggests a high performance lateral super barrier rectifier (Lateral SBR) device which has the advantages of both Schottky diode and pn junction, that is, low forward voltage and low leakage current, respectively. Advantage of the proposed lateral SBR is that it can be easily implemented and integrated in current BCD platform. As a result of simulation using TCAD, BVdss = 48 V, $V_F=0.38V$ @ $I_F=35mA$, T_j = $150^{\circ}C$ were obtained with very low leakage current characteristic of 3.25 uA.

참고문헌 (Reference)

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