이온주입된 Si에서 급속 열처리에 따른 결정성 거동에 관한 연구 = A Study of Crystalline Behaviour in Rapid Thermal Annealed Ion-Implanted Silicon

다국어 초록 (Multilingual Abstract)

We investigated the crystalline behaviour in active ion implanted by Secondary ion mass spectroscopy (SIMS) and Raman spectroscopy. The implantation-induced amorphization of damaged layer was clearly observed via the evolution,with increasing fluence of the broad four-band continuum of amorphous Si which extends from zero up to ??. For the samples annealed wsing rapid thermal annealing(RTA) after an isochronical anneal(30 min.) and isothermal anneal(450 ℃) of samples implanted with As to a dose of ??, the simple line spectrum of cystalline Si was recoved. The sharp c-Si Raman peak at ?? decreased and broad a-Si to peak centered ?? predominated as the implantaton does was increased. To describe the amorphous-crystalline transition stucture was used RNM and SCM models. We found that peak center and width dramatically change between ?? and 300℃ suggesting their is a large stuctural change in this temperature range.