1 "안티몬 이온주입시 Sb2O3 빔튜닝 방법 및 모니터링연구" 17 (17): 476-, 2004.
2 "실리콘에 붕소의 고에너지 이온주입 에 의한 농도분포에 관한 연구" 15 (15): 289-, 2002.
3 "실리콘에 MeV로 이온주입된 인의 결 함분포와 profile에 관한 연구" 10 (10): 881-, 1997.
4 "]User's Guide, "ICECREM 1996 manual""
5 "The stopping of energetic light ions in elemental matter" 2 (2): 1249-, 1999.
6 "The Stopping and Range of Ions in Solids" 1985.
7 "Silicon VLSI Technology" Prentice Hall Inc. 451-, 2000.
8 "SUPREM IV was origi- nally written at Stanford University by M. E. Law, C. S. Rafferty, and R. W. Dutton." TSUPREM4 is a version of SUPREM-IV from Avant! Inc.
9 "SRIM 2003 manual"
10 "Refined Universal Potentials in Atomic Collisions" 194 : 93-, 1982.
1 "안티몬 이온주입시 Sb2O3 빔튜닝 방법 및 모니터링연구" 17 (17): 476-, 2004.
2 "실리콘에 붕소의 고에너지 이온주입 에 의한 농도분포에 관한 연구" 15 (15): 289-, 2002.
3 "실리콘에 MeV로 이온주입된 인의 결 함분포와 profile에 관한 연구" 10 (10): 881-, 1997.
4 "]User's Guide, "ICECREM 1996 manual""
5 "The stopping of energetic light ions in elemental matter" 2 (2): 1249-, 1999.
6 "The Stopping and Range of Ions in Solids" 1985.
7 "Silicon VLSI Technology" Prentice Hall Inc. 451-, 2000.
8 "SUPREM IV was origi- nally written at Stanford University by M. E. Law, C. S. Rafferty, and R. W. Dutton." TSUPREM4 is a version of SUPREM-IV from Avant! Inc.
9 "SRIM 2003 manual"
10 "Refined Universal Potentials in Atomic Collisions" 194 : 93-, 1982.
11 "Modeling of Boro Phos- phorus and Arsenic Implants into Single -crystal Silicon over a wide Energy Range Few keV to Several MeV" 721-, 1996.
12 "Ion Implantation into non-planar Targets" 45-, 1987.
13 "High energy ion implantation for ULSI" (1) : 49-, 1992.
14 "High Energy Ion Implan- tation" B6 270-, 1985.
15 "Fundamentals of Semi- conductor Processing Technology" Kluwer Academic Publishers 352-, 1995.
16 "Efficient modeling parameter extraction for dual pearson approach to simulate of im- planted impurity profiles in silicon" 33 (33): 645-, 1990.
17 "Device Charistics of MOSFETS in MeV Implanted Substrates" B21 163-, 1987.
18 "Comparison of Theoretical and Empirical Interatomic Potentials" 14-, 1986.
19 "Basic Physical Aspects of High Energy Implantation" B35 205-, 1988.
20 "Annealing of Sb+ ion- implanted Si" (11) : 5326-, 1988.
21 "A Monte Carlo Computer Program for the Transport of Energetic Ions in Amorphous Targets" 174257-, 1980.