Characterization of AlInP Cladding Layers with Mg and Si Diffusion Barriers for High-power Red GaInP-AlGaInP Laser Diodes

다국어 초록 (Multilingual Abstract)

We investigated the doping profiles of Mg and Si dopants near the multiple quantum well (MQW) active region in 640 nm band GaInP-AlGaInP red laser diodes (LDs). With a 200 nm thick Mg diffusion barrier, the optimal doping profiles with an Mg flow rate of 80 sccm were obtained. Without Si diffusion barrier, significant Si diffusion into MQW layers was observed even at the lowest Si flow rate of 25 sccm. A 100 nm thick Si diffusion barrier suppressed effectively the Si diffusion into MQW layers, resulting in the improved laser performance. The results suggest that undoped diffusion barriers for Mg and Si dopants in AlInP cladding layers with optimal thickness will enhance the laser performance.

참고문헌 (Reference)

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