Thermoelectric Bi<sub>2</sub>Te<sub>3</sub> thin films were synthesized by a co-sputtering method at 300℃. A Fe dopant was considered to enhance the thermoelectric properties of the system. The Seebeck coefficient of the...
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https://www.riss.kr/link?id=A106827118
배상현 ; 최순목 ; Bae, Sang Hyun ; Choi, Soon-Mok
2020
Korean
KCI등재
학술저널
141-146(6쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
Thermoelectric Bi<sub>2</sub>Te<sub>3</sub> thin films were synthesized by a co-sputtering method at 300℃. A Fe dopant was considered to enhance the thermoelectric properties of the system. The Seebeck coefficient of the...
Thermoelectric Bi<sub>2</sub>Te<sub>3</sub> thin films were synthesized by a co-sputtering method at 300℃. A Fe dopant was considered to enhance the thermoelectric properties of the system. The Seebeck coefficient of the Fe-doped films increased whereas the electrical conductivity decreased. As a result, the power factor of the system increased owing to the enhanced Seebeck coefficient. Grain growth inhibition was detected in the Fe-doped system, which produced more grain boundaries in the Fe-doped films than in the undoped system. The increased grain boundary scattering was deemed to be effective for a reduced thermal conductivity. This is advantageous for the preparation of high-performance thermoelectric films.
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