Ti/p-Si 太陽電池의 製作과 特性 = Ti/p-Si MIS Solar Cells

다국어 초록 (Multilingual Abstract)

Titanium thin film was deposited on the chemically etched (100) surface of silicon single crystal by the vacuum evaporation. The interfacial oxide was grown by ramp heating. The Ti/p-Si solar cells have shown good rectification properties with the 0.78V built-in potential and the 20μA/㎠ reverse saturation current density in dark. The best cell have 0.58V open circuit voltage, 38.0 mA/㎠ short circuit photocurrent density, 0.64 fill factor and 13.9% energy conversion efficiency under 100mW/㎠ tungsten halogen lamp irradiation. Therefore, this solar cell is very promising one, but the life testing is not performed yet in our laboratory.