Resonant Raman Study on the Nitrogen-Induced Electronic States in GaAs$_{1-x}$N$_{x}$

다국어 초록 (Multilingual Abstract)

Nitrogen-induced electronic states, encompassing E0 through E+, in GaAs1%) have been probed using resonant Raman scattering. We have observed strong Raman intensity resonance enhancement for the L and X zone boundary phonons as well as the zone center phonons for excitations near the E+ transition, which provides unambiguous evidence of signicant L and X components in the wave function of the nitrogen-induced E+ state in GaAs1 The resonant Raman scattering prole for the asymmetric line-width broadening of the LO phonon exhibits two distinct maxima attributed to states arising from a splitting of the quadruply degenerate conduction band near the L-point.

참고문헌 (Reference)

1 "To identify various zone-boundary phonons in this study,we have referred to the following;Semiconductors,Physics of Group IV Elements and III-V Compounds,edited by K. H. Hellwege and O. Madelung" Springer-Verlag, Berlin, 17 : 1982

2 ".-222- Journal of the Korean Physical Society" 45 : 2003