We investigated surface morphology and optical anisotropy of strained InGaAs lms grown on GaAs(001) substrate usingatomic force microscopy (AFM) and reectance dierence/reectance anisotropy spectroscopy (RDS/RAS). High temperature(HT)-grown samples wer...
We investigated surface morphology and optical anisotropy of strained InGaAs lms grown on GaAs(001) substrate usingatomic force microscopy (AFM) and reectance dierence/reectance anisotropy spectroscopy (RDS/RAS). High temperature(HT)-grown samples were found to have a rippled surface structure, however for lms grown using a low temperature (LT) growthtechnique, the surface morphology was signicantly improved, without the ripple structure seen on the HT samples. Furthermore,ex situ RD spectra of LT-grown samples showed notable peaks near the critical energies of band structure originated from bulkelectronic transitions.