In this paper, we are examined, trap states and discharging mechanism of metal-nitride-oxide- semiconductor devices using C-V measurement and TSC technique.
One of the four TSC components which is due to traps in nitride and oxide-nitride inter-face...
In this paper, we are examined, trap states and discharging mechanism of metal-nitride-oxide- semiconductor devices using C-V measurement and TSC technique.
One of the four TSC components which is due to traps in nitride and oxide-nitride inter-face and known to contribute memory effect can be separated from other components and examined.
Charges released from memory trap are measured in TSC and compared with the charge calculated from the flat band voltage shift before and after TSC measurement.
It is observed good correlation between Q(TSC) and Q(ΔVFB).
Peak shape method and heating rate method are applied to determine the trap energy level.
As the results, the energy level of the memory trap lies 0.44-0.66eV from the bottom of nitride conduction band and frequency factor is 6.58×10( )sec( )