Electrical Properties of Delta-Doped Silicon-Nanowire Field-Effect Transistors

다국어 초록 (Multilingual Abstract)

We report on complementary delta-doping (δ-doping) and the
electrical transport properties in single-crystal silicon nanowires
(SiNWs) synthesized by using chemical vapor deposition via a
vapor-liquid-solid growth process. Self-limited δ-doping layers were
formed on intrinsic SiNW surfaces with either phosphine (PH3) or
diborane (B2H6) molecular precursors and were then capped with
intrinsic Si shell layers. Gate-dependent transport measurements
showed that these δ-doped SiNWs behaved as either p-type or n-type
channels in field-effect transistors (FETs) with transconductances
of 150 nS and 130 nS and carrier mobilities of 45 ㎤/Vs and 40
㎤/Vs for p-type and n-type SiNW FETs, respectively.

다국어 초록 (Multilingual Abstract)

We report on complementary delta-doping (δ-doping) and the
electrical transport properties in single-crystal silicon nanowires
(SiNWs) synthesized by using chemical vapor deposition via a
vapor-liquid-solid growth process. Self-limited δ-doping layers were
formed on intrinsic SiNW surfaces with either phosphine (PH3) or
diborane (B2H6) molecular precursors and were then capped with
intrinsic Si shell layers. Gate-dependent transport measurements
showed that these δ-doped SiNWs behaved as either p-type or n-type
channels in field-effect transistors (FETs) with transconductances
of 150 nS and 130 nS and carrier mobilities of 45 ㎤/Vs and 40
㎤/Vs for p-type and n-type SiNW FETs, respectively.

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