Effects of annealing temperature on GO-Cu2O composite films grown by electrochemical deposition for PEC photoelectrode

다국어 초록 (Multilingual Abstract)

In this work, graphene oxideecuprous oxide (GO-Cu2O) composite films were grown on fluorine-doped tin oxide substrates by electrochemical deposition. We investigated the effects of the annealing temperature on the morphological, structural, optical and photoelectrochemical (PEC) properties of GO -Cu2O composite films. As a result, our work shows that while GO-Cu2O composite films exhibit the highest XRD (111) peak intensity at 300 ℃ sample, the highest photocurrent density value obtained was -4.75 mA/cm2 at 200 ℃ sample (using 0.17 V versus a reversible hydrogen electrode (RHE)). In addition, a reduction reaction at 300 ℃ sample was observed using XPS analysis from the shift in the O1s peak in addition to a weaker O1s peak intensity.

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