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SF<sub>6</sub>, C<sub>4</sub>F<sub>8</sub>, O<sub>2</sub> 가스 변화에 따른 실리콘 식각율과 식각 형태 개선
권순일,양계준,송우창,임동건,Kwon, Soon-Il,Yang, Kea-Joon,Song, Woo-Chang,Lim, Dong-Gun 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.4
Deep trench etching of silicon was investigated as a function of RF source power, DC bias voltage, $C_4F_8$ gas flow rate, and $O_2$ gas addition. On increasing the RF source power from 300 W to 700 W, the etch rate was increased from $3.52{\mu}m/min$ to $7.07{\mu}m/min$. The addition of $O_2$ gas improved the etch rate and the selectivity. The highest etch rate is achieved at the $O_2$ gas addition of 12 %, The selectivity to PR was 65.75 with $O_2$ gas addition of 24 %. At DC bias voltage of -40 V and $C_4F_8$ gas flow rate of 30 seem, We were able to achieve etch rate as high as $5.25{\mu}m/min$ with good etch profile.