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김은하,최효직,고대홍 연세대학교 산업기술연구소 1999 논문집 Vol.31 No.2
Formations of TiSi₂ thin films by a solid state reaction between Ti thin films and Si substrates and the effects of the conditions of Si substrates have been investigated. Low-Resistant C54- TiSi films were formed by rapid thermal processes at 750℃ on the undroped Si (100) substrate, and at 800℃ on the As or B-doped Si (100) substrate as well as on As or B-droped poly-Si substrates. Cross-sectional TEM analyses confirmed the formation of small-grained C49 TiSi₂films by rapid thermal processes at 700℃ on pre-amorphized poly-Si substrate by As implantation. The temperatures of the transformation to the C5 phase decreased in small-grained C49- TiSi₂films. Finally, low resistant C54 TiSi₂thin films were selectively formed on gate, source, and drain regions by SALICIDE process with pre-amorphizaton of substrates. Microstructures and electrical properties of TiSi₂ film were investigated. Sheet resistance of TiSi₂ film on 1.2㎛-wide poly-Si gates was 3.8~4.2Ω/□, and XRD results showed phase formation of C54 TiSi₂ films.