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곽호영,권혁민,권성규,장재형,이환희,이성재,고성용,이원묵,이희덕,Kwak, Ho-Young,Kwon, Hyuk-Min,Kwon, Sung-Kyu,Jang, Jae-Hyung,Lee, Hwan-Hee,Lee, Song-Jae,Go, Sung-Yong,Lee, Weon-Mook,Lee, Hi-Deok 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.12
In this paper, reliability of the two sandwiched MIM capacitors of $Al_2O_3-HfO_2-Al_2O_3$ (AHA) and $SiO_2-HfO_2-SiO_2$ (SHS) with hafnium-based dielectrics was analyzed using two kinds of voltage stress; DC and AC voltage stresses. Two MIM capacitors have high capacitance density (8.1 fF/${\mu}m^2$ and 5.2 fF/${\mu}m^2$) over the entire frequency range and low leakage current density of ~1 nA/$cm^2$ at room temperature and 1 V. The charge trapping in the dielectric shows that the relative variation of capacitance (${\Delta}C/C_0$) increases and the variation of voltage linearity (${\alpha}$/${\alpha}_0$) gradually decreases with stress-time under two types of voltage stress. It is also shown that DC voltage stress induced greater variation of capacitance density and voltage linearity than AC voltage stress.
HfO<sub>2</sub>/Hf/Si MOS 구조에서 나타나는 HfO<sub>2</sub> 박막의 물성 및 전기적 특성
배군호,도승우,이재성,이용현,Bae, Kun-Ho,Do, Seung-Woo,Lee, Jae-Sung,Lee, Yong-Hyun 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.2
In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition (ALD). We studied the electrical and material characteristics of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3$ at $350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. Round-type MOS capacitors have been fabricated on Si substrates with $2000\;{\AA}$-thick Pt top electrodes. The composition rate of the dielectric material was analyzed using TEM (Transmission Electron Microscopy), XRD (X-ray Diffraction) and XPS (X-ray Photoelectron Spectroscopy). Also the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) characteristics were measured. We calculated the density of oxide trap charges and interface trap charges in our MOS device. At the interface between $HfO_2$ and Si, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. And finally, the generation of both oxide trap charge and interface trap charge in $HfO_2$ film was reduced effectively by using Hf metal layer.
High Performance Capacitive RF‑MEMS Switch Based on HfO2 Dielectric
Mahesh Angira 한국전기전자재료학회 2019 Transactions on Electrical and Electronic Material Vol.20 No.1
This paper presents a new type of capacitive shunt RF-MEMS switch. In the proposed design, HfO2a high-k dielectric material has been used in place of SiO2. The switch based on HfO2 has 8 times less central overlap area, leading to the overall reduction of about 15% in the switch size as compared to the SiO2based switch. The compactness has been achieved further through the interdigitation of signal lines with actuation electrodes. Further, a floating metal layer has been incorporated in the design to eliminate the capacitance reduction problem in the down-state due to surface roughness. The floating metallayer also makes the down-state behavior predictable in terms of resonant frequency. The switch based on HfO2 shows 52.70 dB isolation and 0.06 dB insertion loss at 9 GHz as compared to the 50.60 dB isolation, 0.25 dB insertion loss for the switch with SiO2. Pull-in voltage has been reduced around 65% at a gap of 1 μm between bridge and transmission line without much affecting the RF performance due to the reduced overlap area. In addition, improvement of around 2 times in the bandwidth has also been achieved. The designed switch can be used at device and sub-system level in the future telecommunication applications.
곽호영,권성규,권혁민,성승용,임수,김철영,이가원,이희덕 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.5
In this paper, the dielectric relaxation and reliability of high capacitance density metal-insulator-metal (MIM) capacitors using Al2O3-HfO2-Al2O3 and SiO2-HfO2-SiO2 sandwiched structure under constant voltage stress (CVS) are characterized. These results indicate that although the multilayer MIM capacitor provides high capacitance density and low dissipation factor at room temperature, it induces greater dielectric relaxation level (in ppm). It is also shown that dielectric relaxation increases and leakage current decreases as functions of stress time under CVS, because of the charge trapping effect in the high-k dielectric.
Kwak, Ho-Young,Kwon, Sung-Kyu,Kwon, Hyuk-Min,Sung, Seung-Yong,Lim, Su,Kim, Choul-Young,Lee, Ga-Won,Lee, Hi-Deok The Institute of Electronics and Information Engin 2014 Journal of semiconductor technology and science Vol.14 No.5
In this paper, the dielectric relaxation and reliability of high capacitance density metal-insulator-metal (MIM) capacitors using $Al_2O_3-HfO_2-Al_2O_3$ and $SiO_2-HfO_2-SiO_2$ sandwiched structure under constant voltage stress (CVS) are characterized. These results indicate that although the multilayer MIM capacitor provides high capacitance density and low dissipation factor at room temperature, it induces greater dielectric relaxation level (in ppm). It is also shown that dielectric relaxation increases and leakage current decreases as functions of stress time under CVS, because of the charge trapping effect in the high-k dielectric.
Bae, Tae-Eon,Jang, Hyun-June,Yang, Jong-Heon,Cho, Won-Ju American Chemical Society 2013 ACS APPLIED MATERIALS & INTERFACES Vol.5 No.11
<P>High performance silicon nanowire (SiNW) sensors with SiO<SUB>2</SUB>/HfO<SUB>2</SUB>/Al<SUB>2</SUB>O<SUB>3</SUB> (OHA) engineered sensing thin films were fabricated. A lower interface state density, a larger capacitance and a stronger chemical immunity, which are essential for enhancing the performance of devices, were accomplished by stacking thin SiO<SUB>2</SUB>, HfO<SUB>2</SUB>, and Al<SUB>2</SUB>O<SUB>3</SUB> layers, respectively, in sequence on the SiNW channel. Compared with the conventional single SiO<SUB>2</SUB> thin film, the staked OHA thin films demonstrated improved sensing performances; a higher sensitivity, a lower hysteresis voltage, and a smaller drift rate, as well as a higher output current. Therefore, the SiNW sensors with OHA stacked sensing thin films are very promising to biological and chemical sensor applications.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2013/aamick.2013.5.issue-11/am401026z/production/images/medium/am-2013-01026z_0007.gif'></P>
Pydimarri Padmaja,Radhamma Erigela,D. Venkatarami Reddy,SK Umar Faruq,A. Krishnamurthy,B. Balaji,M. Lakshmana Kumar,Sreevardhan Cheerla,Vipul Agarwal,Y. Gowthami 한국전기전자재료학회 2024 Transactions on Electrical and Electronic Material Vol.25 No.2
In this paper, we have investigated the impact of the un-doped and recessed gate structure on the performance of the 6 H-SiC Metal Semiconductor Field Effect Transistor. The performance of the 6 H-SiC MESFET analyzed using TCAD simulations. The proposed un-doped gate structure made of high-k dielectric materials and low-k dielectric materials being hafnium oxide (HfO2) and silicon dioxide (SiO2) and it has minimized ionized impurity scattering, leading to increased electron mobility and improved carrier concentration. One of substrate layer of this device grown on Silicon (Si) and β-gallium oxide (β-Ga2O3). Performance metrics such as drain current, transconductance, subthreshold slope, and cutoff frequency are evaluated and compared with conventional SiC MESFET structures. The proposed device exhibits superior current driving capabilities, enhanced transconductance, and reduced leakage currents, leading to improved power efficiency. Moreover, the recessed gate structure contributes to a significant reduction in short channel effects, making the device more suitable for low power applications. The simulation parameters are calculated and compared with conventional MESFET structure with the length of source and drain in submicron technology. Therefore the drain current of this proposed device is improved 68%.