WTO체제의 한국 농업에 대한 영향과 대응방안 : 최근의 국제농산물시장의 현황과 관련하여

정영섭,윤병선 건국대학교 사회정책연구소 1996 사회과학연구 Vol.6 No.-

With the beginning of WTO system, the anxiety about Korea Agriculture is being presented seriously. Moreover, the indications of world food crisis have been occurred frequently. In this situation, the purpose of this thesis is showing the way for food security and the existence of Korea agriculture. The composition of this thesis is as fellows ; 1. The background and it's content of UR agricultural negotiation We analysed 1980's international agricultural market, the relation between UR/WTO system and multinational agribusiness, and UR agreement on agriculture in this chapter. 2. Recent trend of international agiculture In this chapter, we analysed recent food situation of rice, wheat, and coarse grain. 3. The change of agricultural policy in USA, EU, and Japan-in the point of environmental view. 4. Conclusion-the survival strategy of Korea agriculture. In the conclusion, we emphasized on the practical application of direct payment of farmer and subsidy on the environment-protective farming.

電子商去來를 통한 競爭力 强化에 관한 硏究

丁榮燮,尹汐 건국대학교 사회정책연구소 2000 사회과학연구 Vol.13 No.-

기판온도 및 박막두께가 Ga-doped ZnO 박막의 특성에 미치는 영향

조원준(Won Jun Cho),강성준(Seong Jun Kang),윤영섭(Yung Sup Yoon) 大韓電子工學會 2010 電子工學會論文誌-SD (Semiconductor and devices) Vol.47 No.1

본 연구에서는 RF 마그네트론 스퍼터링 법으로 Eagle 2000 유리 기판 위에 Ga-doped ZnO (GZO) 박막을 제작하여, 기판온도 100∼400 ℃ 및 박막두께에 따른 박막의 결정화 특성과 전기적 및 광학적 특성을 조사하였다. 공정조건에 상관없이 모든 GZO 박막은 c-축 배향성을 나타내는 (002) 회절 피크만이 관찰되었고, 300 ℃에서 400 ㎚ 증착한 GZO 박막이 가장 우수한 결정성을 나타내었으며, 그 때의 반가폭 값은 0.4°이었다. 또한, AFM 으로 박막의 표면형상을 분석한 결과 300 ℃에서 400 ㎚ 증착한 박막에서 비교적 입자가 고르고 치밀한 박막이 형성되었다. 전기적 특성은 홀 측정 결과 300 ℃에서 400 ㎚ 증착한 박막에서 가장 낮은 비저항 (8.01×10<SUP>-4</SUP> Ω㎝)과 가장 높은 전자 캐리어농도 (3.59×10<SUP>20</SUP> ㎝<SUP>-3</SUP>) 를 나타내었다. 모든 GZO 박막은 공정조건에 무관하게 가시광 영역에서 80 %의 투과율을 나타내었으며, 기판온도 및 박막두께 증가에 따른 Ga 도핑효과의 증가로 밴드 갭이 넓어지는 Burstein-Moss 효과가 관찰되었다. In this study, Ga-doped ZnO (GZO) thin films have been fabricated on Eagle 2000 glass substrates at various substrate temperatures 100∼400 ℃ and thin film thickness by RF magnetron sputtering in order to investigate the structural, electrical, and optical properties of the GZO thin films. It is observed that all the thin films exhibit c-axis orientation and a (002) diffraction peak only. The GZO thin films, which were deposited at T=300 ℃ and 400 ㎚, shows the highest (002) orientation, and the full width at half maximum (FWHM) of the (002) diffraction peak is 0.4°. AFM analysis shows that the formation of relatively smooth thin films are obtained. The lowest resistivity (8.01×10<SUP>-4</SUP> Ω㎝) and the highest carrier concentration (3.59×10<SUP>20</SUP> ㎝<SUP>-3</SUP>) are obtained in the GZO thin films deposited at T=300 ℃ and 400 ㎚. The optical transmittance in the visible region is approximately 80 %, regardless of process conditions. The optical band-gap shows the slight blue-shift with increase in doping which can be explained by the Burstein-Moss effect.

PLD 법으로 제작한 In₂O₃-ZnO 박막의 광학적 및 전기적 특성

신현호(Hyun Ho Shin),한정우(Jung Woo Han),강성준(Seong Jun Kang),윤영섭(Yung Sup Yoon) 대한전자공학회 2008 電子工學會論文誌-SD (Semiconductor and devices) Vol.45 No.7

본 연구에서는 펄스 레이저 법으로 200 mTorr 의 산소 분압에서 기판 온도를 200 ℃ 에서 600 ℃ 까지 변화시켜 가며, quartz 기판 위에 In₂O₃-ZnO 박막을 제작하여 광학적 및 전기적 특성을 조사하였다. XRD 측정을 통해 In₂O₃-ZnO 박막이 다결정 상태인 것을 알 수 있었으며, 기판 온도가 500 ℃ 로 증가함에 따라 35.5° 부근의 In₂O₃(400) 피크는 감소한 반면 30.6°부근의 In2O3 (222) 피크는 증가했다. 박막의 표면을 AFM 으로 조사한 결과, round type 의 결정립들이 관찰되었으며 표면 거칠기 값은 500 ℃ 에서 제작한 박막에서 가장 낮은 값 (6.15 ㎚) 을 나타내었다. 모든 In₂O₃-ZnO 박막이 가시광 영역에서 평균 82 % 이상의 투과율을 보였다. 또, 500 ℃ 에서 제작한 In2O3-ZnO 박막에서 가장 높은 캐리어 농도 (2.46×10<SUP>20</SUP> ㎝<SUP>-3</SUP>) 값과 가장 낮은 비저항 (1.36×10<SUP>-3</SUP> Ω㎝) 값을 나타내었다. In this study, In₂O₃-ZnO thin films are prepared on quartz substrates by the pulsed laser deposition and their optical and electrical properties are investigated as the function of substrate temperatures (200 ~ 600 ℃) at the fixed oxygen pressure of 200 mTorr. The XRD measurement shows that polycrystalline In₂O₃-ZnO thin films are formed. In the XRD measurement, the intensity of the (400) In₂O₃ peak at 35.5° decreases and that of the (222) In₂O₃ peak at 30.6° increases with the increase substrate temperature up to 500 ℃. From the result of AFM measurement, the morphology of In₂O₃-ZnO thin films are observed as round-type grains. The lowest surface roughness (6.15 ㎚) is obtained for the In₂O₃-ZnO thin film fabricated at 500 ℃. The optical transmittance of In₂O₃-ZnO thin films are higher than 82 % in the visible region. The maximum carrier concentration of 2.46×10<SUP>20</SUP> ㎝<SUP>-3</SUP> and the minimum resistivity of 1.36×10<SUP>-3</SUP> Ω㎝ are obtained also for the In₂O₃-ZnO thin film fabricated at 500 ℃.

공정 압력과 산소 가스비가 투명 플라스틱 기판에 성장시킨 AZO 박막에 미치는 영향

이준표(Jun Pyo Lee),강서운(Seong Jun Kang),정양희(Yang Hee Joung),윤영섭(Yung Sup Yoon) 대한전자공학회 2010 電子工學會論文誌-SD (Semiconductor and devices) Vol.47 No.2

본 연구에서는 RF magnetron sputtering 법으로 기판온도 200 ℃ 에서 공정 압력 (5∼20 mTorr)과 산소 가스비 (0∼3 %) 를 변화시켜가며 PES 플라스틱 기판 위에 AZO (Al : 3 wt%) 박막을 제작하여 광학적 및 전기적 특성을 조사하였다. XRD 측정을 통해 공정 조건에 관계없이 모든 AZO 박막이 c 축으로 우선 성장함을 확인할 수 있었다. 박막의 표면을 AFM 으로 조사한 결과, 표면 거칠기 값은 공정압력 5 mTorr, 산소 가스비 3 % 에서 제작한 박막에서 가장 낮은 값 (3.49 ㎚) 을 나타내었다. 모든 AZO 박막이 가시광 영역에서 80 % 정도의 투과율을 보였으며, 공정 압력과 산소 가스비가 감소할수록 에너지 밴드갭이 증가하는 Burstein-Moss 효과를 관찰할 수 있었다. Hall 측정 결과, 공정 압력 5 mTorr와 산소 가스비 0 %에서 제작한 AZO 박막에서 가장 높은 캐리어 농도 2.63 × 10<SUP>20</SUP> ㎝<SUP>-3</SUP> 값과 가장 낮은 비저항 4.35 × 10<SUP>-3</SUP> Ω㎝ 값을 나타내었다. In this study, AZO (Al : 3 wt%) thin films have been prepared on PES Plastic substrates at various working pressure (5∼20 mTorr), O2 gas flow rate (0∼3 %) and the fixed substrate temperature of 200 ℃ by using the RF magnetron sputtering and their optical and electrical properties have been studied. The XRD measurement shows that AZO thin films exhibit c-axis preferred orientation. From the results of AFM measurements, it is known that the lowest surface roughness (3.49 ㎚) is obtained for the AZO thin film fabricated at 5 mTorr of working pressure and 3 % of O₂ gas flow rate. The optical transmittance of AZO thin films is measured as 80 % in the visible region. We observe that the energy band gap of AZO thin films increases with decreasing the working pressure and the O₂ gas flow rate. This phenomenon is due to the Burstein-Moss effect. Hall measurement shows that the maximum carrier concentration (2.63 × 10<SUP>20</SUP> ㎝<SUP>-3</SUP>) and the minimum resistivity (4.35 × 10<SUP>-3</SUP> Ω㎝) are obtained for the AZO thin film fabricated at 5 mTorr of working pressure and 0 % of O2 gas flow rate.

전계인가 진공 증착법으로 제작된$\beta$ -PVDF (Poly(vinylidene fluoride)) 박막의 초전 특성

장동훈,강성준,윤영섭,Chang, Dong-Hoon,Kang, Seong-Jun,Yoon, Yung-Sup 대한전자공학회 2002 電子工學會論文誌-SD (Semiconductor and devices) Vol.39 No.5

전계인가 진공증착법으로 β상을 가지는 PVDF (Polyvinylidene Fluoride) 박막을 제작한 후, dynamic 방법으로 초전 특성을 측정하여 초전형 적외선 센서의 응용가능성에 대하여 조사하였다. PVDF 박막의 응답특성이 저주파와 고주파 영역에 따른 변조 주파수의 주파수 분산 (dispersion)으로 고려되었고, 그에 따른 초전 특성의 주파수 의존성을 관찰하였다. 저주파 (2∼100㎐) 영역에서 분역의 재배향 (reorientation) 되는 속도는 변조주파수의 속도보다 빠르므로 분극의 변화량이 증가하여 최대 값을 나타낸다. 반면에 고주파 (100∼1000㎐) 영역에서 분역의 재배향은 주파수 증가에 따라 방해를 받아 분극의 변화량이 억제되어 초전 응답이 감소하는 것을 알 수 있다. 초전계수와 전압감도 및 비검출능을 위한 재료평가지수는 각각 3.2×10/sup -10/C/㎠·K, 2.34×10/sup -10/C·cm/J 1.32×10/sup -9/C·cm/J이었고, 잡음등가전력과 비검출능은 각각 1.66×10/sup -7/W/㎐/sup ½/, 6.03×10/sup 5/cm·㎐/sup ½/W로 나타났다. The PVDF (Polyvinylidene Fluoride) thin film having P phase is prepared by the vacuum deposition with applying the electric field and its pyroelectric properties are studied by using a dynamic method to examine the possibility of the application to the pyroelectric IR sensor. The pyroelectric responses of the PVDF thin film are characterized as the frequency dispersion in both low and high modulation frequency regions, and their frequency dependences are observed. In the low frequency region (2~10Hzz), the polarization can easily rotate with the increase of modulation frequency and show the maximum since the reorientation rate of domains is higher than the modulation frequency. On the other hand, in the high frequency region (100~1000Hz), the pyroelectric response decreases as the frequency increases, because the reorienatation rate of domains is suppressed and thus, the change of polarization decreases. Pyroelectric coefficient, figure of merits for noise equivalent power and detectivity of the PVDF thin film are measured as 3.2$\times$10$^{-10}$ C/$\textrm{cm}^2$.K, 2.34$\times$10$^{-10}$ C.cm/J and 1.32$\times$10$^{-9}$ C.cm/J, respectively. Also, the noise equivalent and the detectivity are 1.66$\times$10$^{-7}$ W/H $z^{$\sfrac{1}{2}$}$, 6.03$\times$10$^{5}$ cm.H $z^{$\sfrac{1}{2}$}$W, respectively.

Dynamic Pyroelectric Effects in PZT Ceramics and LiTaO3 Single Crystals

Yung Sup Yoon 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.47 No.1

Pyroelectric characteristics of PZT ceramics and LiTaO3 single crystals are investigated by using the dynamic measurement method in the frequency range of 2 2000 Hz. On the basis of a comparative analysis of the frequency dependencies of pyroelectric parameters of PZT ceramics of various compositions and of the LiTaO3 single crystals the existence of dispersion of the pyroelectric coefficient for ceramic samples and the absence of dispersion for single crystals in the investigated frequency range are determined. The experimental data are interpreted through a change in the microstructure. The qualitative experimental results are highly informative for understanding the physical nature of the temporal dispersion of material parameters in ferroelectrics.

후열 처리 온도 변화에 따른 phosphorus doped ZnO 박막의 전기적 및 광학적 특성

한정우(Jung Woo Han),강성준(Seong Jun Kang),윤영섭(Yung Sup Yoon) 대한전자공학회 2009 電子工學會論文誌-SD (Semiconductor and devices) Vol.46 No.2

본 연구에서는 sapphire 기판위에 P (phosphorus) 도핑된 ZnO 박막을 제작한 후, 산소 분위기에서 후열 처리 온도가 박막의 전기적 및 광학적 특성에 미치는 영향에 대해서 조사하였다. XRD 측정 결과, 후열 처리 온도에 무관하게 모든 박막이 c축 배향성을 나타내었다. Hall 측정 결과, 850℃에서 후열 처리한 박막에서만 p형 전도 특성이 관찰되었다. 이때의 홀 캐리어 농도와 홀 이동도는 각각 1.18×1016㎝<SUP>-3</SUP>과 0.96㎠/Vs의 값을 나타내었다. 저온 PL 측정 결과, 850℃에서 후열 처리한 박막의 경우 p형 특성을 나타내는 상당량의 억셉터가 관련된 A0X (3.351eV), FA (3.283eV) 및 DAP (3.201eV) 피크가 관찰되었다. 향후 P 도핑된 ZnO 박막의 공정 조건과 후열 처리 조건을 최적화 시킨다면, 차세대 광소자에 응용될 수 있는 매우 유망한 재료로 주목받을 것으로 기대된다. The effects of post-annealing temperature on the optical and electrical properties of P-doped ZnO thin films grown on sapphire substrate have been investigated under oxygen ambient. The XRD shows that regardless of the post-annealing temperature , all P-doped ZnO thin films indicate the c-axis orientation. The results of hall effect measurements indicate the P-doped ZnO thin film annealed at 850℃ exhibits p-type behavior with hole concentration of 1.18×1016㎝<SUP>-3</SUP> and hole mobility of 0.96㎠/Vs. The low-temperature (10K) photoluminescence results reveal that the peak related to the neutral-acceptor exciton (A0X) , free electrons to neutral acceptor (FA) and donor acceptor pair (DAP) at 3.351eV, 3.283eV and 3.201eV are observed in the films showing p-type behavior with acceptor. The optimization of deposition and post-annealing conditions will certainly make the P-doped ZnO thin films promising materials for the application to the next generation of optical devices.

임펄스 모델에 의한 SAW Transversal Filters의 주파수 응답 특성

손헌영(Hun Yung Shon),윤영섭(Yung Sup Yoon) 대한전자공학회 1999 대한전자공학회 학술대회 Vol.1999 No.11

한국 농업에서의 유전자원 활용 현황과 금후 전망

김창영 ( Chang Yung Kim ),이정란 ( Jeong Ran Lee ),윤문섭 ( Mun Sup Yoon ),조규택 ( Gyu Taek Cho ),백형진 ( Hyung Jin Baek ),고호철 ( Ho Cheol Ko ),조양희 ( Yang Hee Cho ),전영아 ( Young Ah Jeon ),김정곤 ( Chung Kon Kim ) 한국국제농업개발학회 2010 韓國國際農業開發學會誌 Vol.22 No.3

The application and use of agricultural genetic resources have been reviewed since Korea was freed from the rule of Japanese imperialism in 1945. The whole changes that took place in the Korean agriculture, such as, characteristics of agriculture, application trends of genetic resources, roles of agricultural genebank, and future utilization perspectives of plant genetic resources were reviewed and summarized. The whole changes that took place in the Korean agriculture since the liberation from the Japanese rule were as follows. Before 1960s, Korean agriculture was a subsistence farming system with the landraces, introduction of foreign cultivars, and the beginning stage of domestic breedings. In 1960-1970s, the importance of genetic resources came up because the Korean government had to solve the national shortage of foods by developing and disseminating high-yielding cultivars such as `tongil rice`. In 1980-1990s, four-season-long cultivation of horticultural products were reared and predominantly based on the public needs. Since 2000s, diverse varieties of genetic resources became more important because of the need to cultivate crops with healthy function and high nutritional value. Hence, the interest in the diversity of agricultural genetic resources increased. The Rural Development Administration (RDA) has designated 91 local sub-banks for managing the overall national agricultural genetic resources. RDA installed the seed bank that contain more than 500,000 accessions with high technologies to preserve plant germplasms. Currently, the RDA deposits approximately 160,000 accessions of seeds, and developed and disseminated 2,477 cultivars using these genetic resources. In summary, the major role of national agricultural genebank are as follows: 1) to manage national agricultural genetic resources. 2) to secure diverse genetic resources of current and future values, to conduct multiplication and characteristic assessment of genetic resources, and to utilize genetic resources through safe preservation and distribution service. 3) to conduct a variety of researches such as genetic diversity analyses, develop seed dormancy and preservation tools, assess seed characteristics and multiplication of seeds, develop technology to discover valuable resources using functional genes. 4) to raise the national status for preservation of agricultural genetic resources through international and domestic cooperation. Agricultural genetic resources will be used for the following purposes: to continuously produce competitive cultivars with high quality, to be utilized as raw materials to meet a constant food supply and demands of the general public`s well-being, to be applied to make agri-ecosystem healthy and prosperous, and to be used as a driving force for new growth of industries related to energy, new materials and stuffs.