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Ko, Yeongun,Song, Seung Keun,Kim, Nam Hee,Chang, Suk Tai American Chemical Society 2016 Langmuir Vol.32 No.1
<P>We report an effective method for fabricating highly transparent and stretchable large-area conducting films based on a directional arrangement of silver nanowires (AgNWs) driven by a shear force in a microliter-scale solution process. The thin conducting films with parallel AgNWS or cross-junctions of AgNWs are deposited on the coating substrate by dragging a microliter drop of the coating solution trapped between two plates. The optical and electrical properties of the AgNW thin films are finely tuned by varying the simple systematic parameters in the coating process. The transparent thin films with AgNW cross-junctions exhibit the superior electrical conductivity with a sheet resistance of 10 Omega sq(-1) at a transmittance of 85% (lambda = 550 nm), which is well described by the high ratio of DC to optical conductivity of 276 and percolation theory in a two-dimensional matrix model. This simple coating method enables the deposition of AgNW thin films with high optical transparency, flexibility, and stretchability directly on plastic substrates.</P>
Cho, Jangwhan,Ko, Yeongun,Cheon, Kwang Hee,Yun, Hui-Jun,Lee, Han-Koo,Kwon, Soon-Ki,Kim, Yun-Hi,Chang, Suk Tai,Chung, Dae Sung The Royal Society of Chemistry 2015 Journal of Materials Chemistry C Vol.3 No.12
<P>We report on a new class of microliter-scale solution processes for fabricating highly uniform and large-area transistor arrays with extremely low consumption of semiconducting polymers. These processes are accomplished by applying a vertical phase separation of polymers with an environmentally benign solvent, a random copolymerization strategy between two highly conductive repeating units, and a meniscus-dragging deposition technique. The successful realization of these three processes, as confirmed by the structural and morphological in-depth characterizations, has enabled the fabrication of high-performance polymeric field-effect transistors that were uniformly distributed, without a single failure, on a 4 inch wafer using only 40 μg of semiconducting polymers. The resulting transistor arrays showed an average mobility of 0.28 cm<SUP>2</SUP>V<SUP>−1</SUP>s<SUP>−1</SUP>, with a low standard deviation of 0.04, as well as ultra-uniform near-zero threshold voltages. Our simple strategy shows great promise for fabricating large-scale organic electronic devices in the future using a truly low-cost process.</P>
Kim, Nam Hee,Kim, Beom Jun,Ko, Yeongun,Cho, Jeong Ho,Chang, Suk Tai WILEY‐VCH Verlag 2013 ADVANCED MATERIALS Vol.25 No.6
<P><B>Fast and reproducible patterning of high‐resolution rGO microstructures over a large area directly on various substrates</B> by modulating the surface energy is reported. The pattern formation of rGO thin films is based on the difference in the adhesion strength between the mold/rGO and rGO/substrates interfaces. Such highly defined rGO micropatterns are applied as electrodes for high‐performance flexible and transparent OFETs.</P>
서로 다른 위치 규칙성을 가지는 두 개의 Poly(3-hexylthiophene) 공액 고분자를 기반으로 한 고분자 복합 박막의 구조와 전기적 특성에 대한 연구
정강훈,Nann Aye Mya Mya Phu,박래수,윤정우,고영운,장민철,Ganghoon Jeong,Nann Aye Mya Mya Phu,Rae-Su Park,Jeong Woo Yun,Yeongun Ko,Mincheol Chang 한국복합재료학회 2023 Composites research Vol.36 No.5
Poly(3-hexylthiophene) (P3HT) is a conjugated polymer that is highly soluble in organic solvents and is readily available. However, its electrical properties as an active channel in electronic devices are not enough for practical applications, necessitating further improvement in the properties. In this study, we demonstrate that the blending of two P3HT polymers (i.e., regio-regular (RR) P3HT and regio-random (RRa) P3HT) with different regioregularities can significantly improve charge transport characteristics of the blend films. The morphological and electrical properties of the blend films were systematically investigated by varying the ratio between two P3HT polymers. Atomic force microscopy (AFM), X-ray diffraction (XRD), and UV-visible absorption spectroscopy (UV-vis) were employed to evaluate the morphological and optoelectronic properties of the blend films. The crystallinity of the blend films increased with increasing the content of RRa-P3HT to 20 wt% and gradually decreased as the content increased to 80%. Consistently, the highest charge carrier mobility was obtained from the blend films containing 20 wt% RRa-P3HT, which value was measured to be 0.029 cm<sup>2</sup>/V·s. The values gradually decreased to 0.0007 cm<sup>2</sup>/V·s with increasing the content of RRa-P3HT to 80 wt%.