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Tran Thi Lan Anh 한국베트남학회 2022 한국베트남학회 학술대회 Vol.2022 No.06
본 연구에서는 베트남에서 교육되고 있는 전문적 한국어 과목 중 베트남인 학생을 위한 전문적 한국어 교육 현황을 분석한 결과, 주로 기존 한국어 교육 및 한국학 교육을 하고 있는 베트남 중부 지방의 중핵 대학에 집중한다. 전문적 한국어 교육이 현재 사회의 요구에 적합하지 못한다는 사실로 인해 전문적 한국어 교육은 기대만큼 효과적이지 못했다. 이러한 바탕으로 본 연구는 한국어 전공을 졸업하는 기준에 접근하면서 졸업한 후의 직업 방향을 이룰 수 있는 해결방안을 제시하는 것을 목적으로 한다. 전체의 효과적이고 전면적인 해결 방안은 베트남 중부지방 전문적 한국어 교육 및 학습 상황을 부분적으로 개선하는 데 도움이 될 것이다.
Fabrication and Characteristics of Fully-sprayed ZnO/CdS/CuInS2 Solar Cells
Tran Thanh Thai,Nguyen Duc Hieu,Luu Thi Lan Anh,Pham Phi Hung,Vo Thach Son,Vu Thi Bich 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.61 No.9
This paper reports the successful fabrication of deposited Glass/ZnO/CdS/CuInS<sub>2</sub> solar cells with superstrate structure using Full Spray Pyrolysis Deposition (FSPD). The structure, optical and electrical properties of the constituent layers are investigated. It is observed that the CuInS<sub>2</sub> (CIS) film deposited from starting solution with [Cu]/[In] = 1.1, and Al-doped CuInS<sub>2</sub> (CIAS) film deposited from solution with [Cu]/[In] = 1.0, [Al]/[In] = 0.12, and using sulfurization process exhibited the best crystallites with tetragonal structure. The optical band gap of the CIAS film is obtained as 1.49 eV. Some physical properties of both ZnO, and CdS thin films are also studied. The parameters of the cells obtained are V<sub>OC</sub> = 425 mV, J<sub>SC</sub> = 14.02 mA/cm<sup>2</sup>, FF = 28.75% and efficiency of 1.71%. The results in our experiment show that FSPD is a potential technique to prepare solar cells based on CIS absorbers in a superstrate structure with low cost and high performance.
Magneto-transport properties of amorphous Ge1-xMnx thin films
유상수,Tran Thi Lan Anh,임영언,김도진,김효진,홍순구,오상준,김창수,이학주,우병칠 한국물리학회 2006 Current Applied Physics Vol.6 No.3
Amorphous Ge1. xMn x thin lms were grown in order to expand the solubility limit of Mn. The amorphous Ge1. xMn x thin lms weregrown on (1 0 0)Si substrate at 373 K by using a thermal evaporator. The solubility of Mn in amorphous Ge1. xMn x thin lms reaches upto 17 at.%. The amorphous Ge1. xMn x thin lms are ferromagnetic and theTC is. 150 K. The largest saturation magnetization of amor-phous Ge1. xMn x thin lms is. 100 emu/cm3 forx = 0.118 at 5 K. The variation of electrical resistivity with respect to temperaturereveals that the amorphous Ge1. xMn x thin lms have semiconductor characteristics. The in-eld electrical resistivity of amorphousGe1. xMn x T< TC, but the reverse is true whenT> TC. However, thein-eld electrical resistivity of amorphous Ge1. xMn x thin lms is always higher than the zero-eld electrical resistivity whenx > . 12 at.%. Magneto-transport characteristics of amorphous Ge1. xMn x thin lms show anomalous Hall phenomenon and negativemagnetoresistance whenT< TC. The results suggest that the Mn atoms in amorphous Ge1. xMn x thin lms be related to spin dependentscattering depending on magnetization.
Electromigration with enhanced green emission in the titanium dioxide nanotube/graphene composite
Tri Tuan Nguyen,Tran Thanh Tung,Dusan Losic,Luu Thi Lan Anh,Le Hong Phuc,Xuan Sang Nguyen 한국물리학회 2019 Current Applied Physics Vol.19 No.10
One of the most studied photoluminescence emission peaks of anatase titanium dioxide (TiO2) is green, located at about 520 nm, which is assigned to the radiative recombination between a mobile electron in the conduction band and oxygen vacancy defect as a trapped hole in the bandgap. Composite materials of TiO2 with graphene are normally shown by the gradual quenching of photoluminescence intensity as a result of carrier lifetime extension, which is important to enhance photocatalytic activity. Herein we report an observation of the intensity enhancement of the green PL emission in a composite TiO2 nanotube (TNT) and graphene produced through facile hydrothermal synthesis. The heterojunction formation of graphene and TNT makes the excited photoelectrons easy to diffuse from TNT to graphene. Hence, the recombination rate of mobile electrons in graphene and trapped holes located on the nanotube surface is enhanced due to the high mobility of electrons in graphene.
Thu Ha Nguyen,Thi Lan Pham,Anh Quan Cao,Tuan Anh Nguyen,Xuan Minh Vu,Thi My Hanh Le,Van Thuan Le,Seiichi Kawahara,Dai Lam Tran 한국고분자학회 2024 Macromolecular Research Vol.32 No.4
This study describes the preparation and characterization of a green and safe membrane based on a natural polymer for metal adsorption. Natural rubber-grafted-(2-hydroxyethyl methacrylate) with a special nanostructure was synthesized by graft copolymerization of 2-hydroxyethyl methacrylate (HEMA) onto the surface of natural rubber (NR) particles using tert-butylhydroperoxide/tetraethylenepentamine as initiators. Optimal conditions for achieving high conversion and grafting efficiency were identified. Characterization of the as-synthesized samples was performed using Fourier-transform infrared spectroscopy, transmission electron microscopy, thermogravimetric analysis, tensile measurement, swelling degree determination, and cytotoxicity testing. The results revealed that HEMA formed a nanoscale matrix surrounding NR particles, which improved the tensile strength, thermal resistance, and swelling degree of the as-prepared samples. Cytotoxicity testing demonstrated that the membrane was safe for human use, as it did not exhibit toxicity to Vero cells at concentrations up to 1024 μg/mL. Furthermore, the membrane displayed a high adsorption capacity toward Fe3+ and was well described by Koble-Corrigan isotherm model and the first–second-order kinetic equation. Moreover, the membrane demonstrated excellent recyclability maintaining its adsorption ability towards Fe3+ ions over five consecutive cycles. Overall, these findings may recommend the NR-HEMA membrane as a promising candidate for metal removal applications.
Hyeong Kyu Lim(임형규),Tran Thi Lan Anh(찬티난안),Sang Soo Yu(유상수),Kui-Jong Baek(백귀종),Young Eon Ihm(임영언),Dojin Kim(김도진),Hyojin Kim(김효진),Chang Soo Kim(김창수) 한국자기학회 2009 韓國磁氣學會誌 Vol.19 No.3
Magnetic phases of polycrystalline Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin films were studied. The Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin films were grown at 400 ℃ by using a molecular beam epitaxy. The Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin films were p-type and electrical resistivities were 4.0 × 10<SUP>?2</SUP>~1.5 × 10<SUP>?4</SUP> ohm-㎝. Based on the analysis of magnetic characteristics and microstructures, it was concluded that the ferromagnetic phase formed on the Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB>/SiO₂/Si(100) thin films was Ge₃Mn? phase which has about 310 K of Curie temperature. Moreover, the Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin film which had Ge₃Mn? phase showed the negative magnetoresistance to be about 9% at 20 K when the magnetic field of 9 T was applied.