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Semiconductor Behavior of Passive Films Formed on Cr with Various Additive Elements
Tsuchiya, Hiroaki,Fujimoto, Shinji,Shibata, Toshio 한국부식방식학회 2003 Corrosion Science and Technology Vol.2 No.1
Photoelectrochemical response and electrochemical impedance behavior was investigated for passive film formed on sputter-deposited Cr alloy in 0.1 kmol·m^(-3). Photoelectrochemical action spectrum could be separated into two components, which were considered to be derived from Cr₂O₃ (E_g ∼ 3.6 eV) and Cr(OH)₃, (E_g ∼ 2.5 eV). The band gap energy, E_g, of each component was almost constant for various applied potentials, polarization periods and alloying additives. The photoelectrochemical response showed negative photo current for most potentials In the passive region. Therefore, the photo current apparently exhibited p-type semiconductor behavior. On the other hand, Mott-Schottky plot of the capacitance showed positive slope, which means that passive film formed on Cr alloy has n-type semiconductor property. These apparently conflicting results are rationally explained assuming that the passive film on Cr alloy formed in the acid solution has n-type semiconductor property with a fairly deep donor level in the band gap and forms an accumulation layer in the most of potential region in the passive state.
Preparation and Properties of Inorganic-organic Hybrid $Li^+$ Ion Conductor by Sol-gel Process
Nishio, Keishi,Miyazawa, Tsutomu,Watanabe, Yuichi,Tsuchiya, Toshio The Korean Ceramic Society 2001 The Korean journal of ceramics Vol.7 No.1
Inorganic-organic hybrid Li$^+$ ion conductors were prepared by the sol-gel process. Tetramethyl orthosilicate (TMOS), polyethylene glycol 200 (PEG$_200$) and lithium bis (trifluoro-methylsulfony) imide were used as raw materials and $H_2O$ was used as a solvent. Hybrid Li$^+$ ion conductor prepared by the sol-gel process showed very high ion conductivities of log${\sigma}_R.T$(S/cm)=-3.73, log${\sigma}_60$(S/cm)=-3.00 at room temperature and $60^{\circ}C$, respectivery. Decomposition voltage was 3.1 V.
Byung-Hoon Kim,황규석,안준형,Keishi Nishio,Toshio Tsuchiya,강보안 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.44 No.2
The surface morphology of epitaxial PZT thin lms deposited on MgO(100) single-crystal substrates by using the chemical solution deposition process with metal naphthenates has been studied with atomic force microscope. The eects of the pyrolysis atmosphere and the pyrolysis time on the PZT grain growth and the surface morphology of the lms were observed, and the surface roughness changes were analyzed by using the power spectral density function and the root-mean-square roughness obtained from the AFM data. The smoothest surface was obtained by using pyrolysis at 200 C in argon, and with increasing holding time during pyrolysis in argon, the surface homogeneity of film increased.
황규석,강보안,김병훈,안준형,Keishi Nishio,Toshio Tsuchiya,전영선 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.46 No.2
Highly c-axis oriented nanocystalline ZnO thin films on silica glass substrates were prepared by using a spin coating-pyrolysis process with a naphthenic acid. As-deposited films were heat treated at 500C, 600C, 700C, 800C, 900C, and 1000 C for 30 min in air. The ZnO films were analyzed by X-ray diffraction, field emission - scanning electron microscopy, scanning probe microscopy, and ultraviolet - visible - near - infrared spectrophotometry. Only the (002) peak and an additional faint (101) peak were observed for all samples. With increasing heat-treatment temperature,the peak intensity of the (002) phase increased. From surface morphological observations,no aggregated particles were evident. All the ZnO films exhibited a high transmittance, above 80 %, in the visible region, except for the film annealed at 1000C, and showed a sharp fundamental absorption edge at 0.380.40μm. The estimated energy band gap for the present films was within the range reported for films and single crystals. Highly c-axis oriented nanocystalline ZnO thin films on silica glass substrates were prepared by using a spin coating-pyrolysis process with a naphthenic acid. As-deposited films were heat treated at 500C, 600C, 700C, 800C, 900C, and 1000 C for 30 min in air. The ZnO films were analyzed by X-ray diffraction, field emission - scanning electron microscopy, scanning probe microscopy, and ultraviolet - visible - near - infrared spectrophotometry. Only the (002) peak and an additional faint (101) peak were observed for all samples. With increasing heat-treatment temperature,the peak intensity of the (002) phase increased. From surface morphological observations,no aggregated particles were evident. All the ZnO films exhibited a high transmittance, above 80 %, in the visible region, except for the film annealed at 1000C, and showed a sharp fundamental absorption edge at 0.380.40μm. The estimated energy band gap for the present films was within the range reported for films and single crystals.