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ESD Design Strategies for High-Speed Digital and RF Circuits in Deeply Scaled Silicon Technologies
Shuqing Cao,Jung-Hoon Chun,Beebe, S G,Dutton, R W IEEE 2010 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS PART 1 R Vol.57 No.9
<P>Challenges of electrostatic discharge (ESD) protection in deeply scaled silicon technologies are addressed by improving design, characterization, and modeling of I/O MOSFETs, interconnect, ESD protection and power clamp devices. Recent progress on ESD protection design for both high-speed digital I/O and radiofrequency (RF) circuits are presented. Topological trade-offs are compared. High speed circuit protection techniques such as the T-coil based ESD design are reviewed in detail. Package- and wafer-level charged device model (CDM) correlation issues are discussed. I/O, ESD devices, and metal interconnect effects are examined using very fast transmission line pulses (VF-TLP) and TLP.</P>
Design and Characterization of ESD Protection Devices for High-Speed I/O in Advanced SOI Technology
Shuqing Cao,Salman, A.A.,Jung-Hoon Chun,Beebe, S.G.,Pelella, M.M.,Dutton, R.W. IEEE 2010 IEEE transactions on electron devices Vol.57 No.3
<P>This paper focuses on the characterization, modeling, and design of electrostatic discharge (ESD) protection devices such as the gated diode, the bulk substrate diode, and the double-well field-effect diode (DWFED) in 45 nm silicon-on-insulator technology. ESD protection capabilities are investigated using very fast transmission line pulsing tests to predict a device's performance in charged device model (CDM) ESD events. Device capacitance, which is critical for high-speed input/output performance, is evaluated, and biasing schemes and processing techniques are proposed to reduce the parasitic capacitance during normal operating conditions. Technology computer-aided design simulations are used to interpret the physical effects. The implementation of devices for meeting CDM protection requirements is discussed. Evaluation results identify DWFED as a promising candidate for the pad-based local-clamping scheme.</P>
Investigation on the Behavior of Stacked Devices Within Output Drivers Under ESD Conditions
Gi-Doo Lee,Jung-Hoon Chun,Shuqing Cao,Beebe, S. G.,Kee-Won Kwon,Dutton, R. W. Institute of Electrical and Electronics Engineers 2012 IEEE transactions on electron devices Vol. No.
<P>This work investigates the robustness of a stacked or cascoded driver under electrostatic discharge (ESD) events. Using output driver circuits in an actual I/O system with predrivers and rail-based power clamps, the impacts of all possible predriver connections and stacked-driver sizing are examined with the very fast transmission line pulse. It is verified that, when the input of the predriver connected to the top MOSFET is grounded, the failure current (<I>IT</I>2) is improved by ~ 110%, compared to the worst case where both predriver inputs are tied to VDD. Also, a simple trigger circuit which guarantees the electrical connection for better ESD immunity is proposed.</P>
GTP Binding Is Required for SEPT12 to Form Filaments and to Interact with SEPT11
Xiangming Ding,Wenbo Yu,Ming Liu,ShuQing Shen,Fang Chen,Lihuan Cao,Bo Wan,Long Yu 한국분자세포생물학회 2008 Molecules and cells Vol.25 No.3
Septins are a family of filament-forming GTP-binding proteins involved in a variety of cellular process such as cytokinesis, exocytosis, and membrane dynamics. Here we report the biochemical and immunocytochemical characterization of a recently identified mammalian septin, SEPT12. SEPT12 binds GTP in vitro, and a mutation (Gly56 to Asn) in the GTPbinding motif abolished binding. Immunocytochemical analysis revealed that wild-type SEPT12 formed filamentous structures when transiently expressed in Hela cells whereas SEPT12G56A generated large aggregates. In addition, wild-type SEPT12 failed to form filaments when coexpressed with SEPT12G56A. We also observed that GTP-binding by SEPT12 is required for interaction with SEPT11 but not with itself.
The role of WRKY47 gene in regulating selenium tolerance in Arabidopsis thaliana
Xi Wu,Manzhi Tao,Yun Meng,Xiangyu Zhu,Liangwen Qian,Alia Shah,Wei Wang,Shuqing Cao 한국식물생명공학회 2020 Plant biotechnology reports Vol.14 No.1
Selenium stress has a serious impact on the growth of plants. However, the available understanding on the mechanism of Se stress response is still insufficient. In this study, we found that the WRKY47 gene plays an important role in maintaining Se homeostasis and tolerance in Arabidopsis thaliana. Expression of WRKY47 is induced by Se stress. The wrky47 mutants are sensitive to Se stress, and this sensitivity is associated with a decrease in the transcription levels of Se-detoxify genes HMT1 and HMT3. Surprisingly, the WRKY47-overexpression lines also showed increased sensitivity to Se stress and had increased Se content; this correlates to an increase in the transcription level of Se-uptake gene PHT1;4 but not Se-detoxify genes HMT1 and HMT3. Our results suggest that gain- and loss-of-function mutations in WRKY47 enhance the sensitivity of A. thaliana plants to Se stress through different mechanisms.