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RISS 인기검색어
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- 저자 : Shamima Choudhury (검색결과 3 건)
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Rafiqul Islam,Shamima Choudhury,S. N. Rahman,Mohammad Jellur Rahman 한양대학교 세라믹연구소 2012 Journal of Ceramic Processing Research Vol.13 No.3
The structural and electrical properties of pure and manganese doped barium titanate (BaTiO3) with a general formula BaMnxTi1-xO3 (where x=0.00, 0.01, 0.02, 0.03, and 0.04) were investigated. For the observation of the surface morphology and estimation of grain sizes scanning electron microscopy (SEM) was employed. The grain size of BaTiO3 increased with an increase of the Mn doping. The Curie temperature (Tc) which indicates the tetragonal-to-cubic transition, of each sample was found from the resistivity versus temperature curve, and Tc of BaTiO3 increased linearly with an increase of the Mn doping. The Tc of un-doped BaTiO3 was lower than that of the doped samples. The Tc value of pure BaTiO3 was found to be 120 oC. It was found that the dielectric constant versus temperature curve also shows a similar type of Tc. The dielectric constant of BaMnxTi1-xO3 was found to decrease with an increase of Mn doping and the Tc of BaTiO3 increases with the addition of Mn. The structural and electrical properties of pure and manganese doped barium titanate (BaTiO3) with a general formula BaMnxTi1-xO3 (where x=0.00, 0.01, 0.02, 0.03, and 0.04) were investigated. For the observation of the surface morphology and estimation of grain sizes scanning electron microscopy (SEM) was employed. The grain size of BaTiO3 increased with an increase of the Mn doping. The Curie temperature (Tc) which indicates the tetragonal-to-cubic transition, of each sample was found from the resistivity versus temperature curve, and Tc of BaTiO3 increased linearly with an increase of the Mn doping. The Tc of un-doped BaTiO3 was lower than that of the doped samples. The Tc value of pure BaTiO3 was found to be 120 oC. It was found that the dielectric constant versus temperature curve also shows a similar type of Tc. The dielectric constant of BaMnxTi1-xO3 was found to decrease with an increase of Mn doping and the Tc of BaTiO3 increases with the addition of Mn.
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Structural and dielectric properties of pure and cerium doped barium titanate
Sabina Yasmin,Shamima Choudhury,M. A. Hakim,A. H. Bhuiyan,M. J. Rahman 한양대학교 세라믹연구소 2011 Journal of Ceramic Processing Research Vol.12 No.4
Barium titanate (BaTiO3) and cerium (Ce) doped BaTiO3 samples were prepared by the standard solid state reaction method and were sintered at 1473 K for four hours. The structural and dielectric properties of the samples were studied. The x-ray diffraction results showed mostly the BaTiO3 phase where the lattice parameter decreased with the addition of Ce. The temperature dependent dielectric constant showed a transition temperature, which decreased with an increase in dopant content. The dielectric constant decreased with an increase in frequency and increased as the amount of dopant was increased. The alternating current resistivity decreased in the lower frequency range (1-100 kHz) and remained constant in the higher frequency range. The direct current (dc) density-voltage characteristics of the samples showed ohmic behavior for both the pure and Ce-doped BaTiO3. As the temperature increased the dc resistivity of the samples decreased. The activation energy increased with the Ce content.
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Tamanna Mariam,I. N. Esha,M. N. I. Khan,Shamima Choudhury,Kazi Hanium Maria 한양대학교 세라믹연구소 2020 Journal of Ceramic Processing Research Vol.21 No.4
A series of Co1-xZnxFe2O4 ferrites with x = 0.0, 0.1, 0.2, 0.3, 0.4, 0.5 were synthesized using the standard double sinteringceramic technique. The single-phase cubic spinel structure of the samples was confirmed from the X-ray diffraction patternsand the sharp high intensity peak revealed that the samples are in good crystalline form. The lattice parameters were observedto increase with the increasing of Zn concentration. By increasing the concentration of Zn content, a significant increase in thedensity and a subsequent decrease in porosity and grain size were observed. The dielectric constant (ε′) of the sample is foundto decrease with the increase in frequency. Dielectric relaxation peaks were observed for the frequency dependence of dielectricloss curves. The dc resistivity at different temperatures was studied and all the samples were of semiconductor nature. Thesaturation magnetization was found to be reduced as the Zn substitution was increased and consequently permeabilitydecreases.
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