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Santosh Kumar,Sabuj Mallik,Ndy Ekere,정재필 대한금속·재료학회 2013 METALS AND MATERIALS International Vol.19 No.5
Stencil printing for flip chip packaging using fine particle solder pastes is a low cost assembly solution with high throughput for fine pitch solder joint interconnects. The manufacturing challenges associated with both solder paste printing increases as electronic device size decreases due to trend of miniaturization in electronic components. Among multiple parameters, the two most important stencil printing parameters are squeegee pressure and printing speed. In this paper, the printing behavior of Pb free Sn-3Ag-0.5Cu solder paste with a particle size distribution of 2-12 μm for wafer level bumping using a stencil printing method (stencil opening dimension -30 μm) was evaluated by varying the printing speed and squeegee pressure to fabricate solder bumps with a sub 100 μm size. The optimal squeegee pressure and print speed for the defect free printing behavior and fairly uniform size distribution of reflowed paste were found to be 7 kgf and 20 mm/s,respectively. The average size of the reflowed printed paste decreased with the increasing squeegee pressure.
압연을 이용한 Sn-37 Pb 와 Sn-3.5 Ag 솔더의 무플럭스 솔더링에 관한 연구
강춘식,정재필,홍순민,박창배,Ekere, Ndy N.,Rajkumar, D. 대한금속재료학회(대한금속학회) 2001 대한금속·재료학회지 Vol.39 No.7
UBM-coated Si-wafer was fluxlessly soldered with glass substrate in N₂ atmosphere using rolled solder sheet. The bulk Sn-37wt%Pb and Sn-3.5wt%Ag solders were rolled to the sheet of 100㎛ thickness in order to achieve a bonding to Si-wafer by fluxless reflow process. The oxide layer on the solder surface was analysed by AES(Auger Electron Spectroscopy). Through rolling, the oxide layer on the solder surface became thin. It was possible to bond a solder disc to the Si-wafer with fluxless process in N₂ gas. Wetting angle of the fluxless soldered disc on the Si-wafer was about 9∼10°. The Si-wafer with a rolled solder was bonded to glass without flux in N₂ atmosphere. The joint was sound, and the thicknesse of intermetallic compound along the interface of Si-wafer was less than 2㎛.