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홍상휘,문지훈,Kouji Mimura,Makoto Mikami,Masahito Uchikoshi,Minoru Isshiki 한양대학교 세라믹연구소 2012 Journal of Ceramic Processing Research Vol.13 No.2
We have investigated the effect of annealing in an O2 atmosphere on the electrical properties of high-quality ZnO single crystals grown by seeded chemical vapor transport (SCVT). A temperature dependent Hall-effect technique indicates that the dominant donor in as-grown ZnO crystals has an ED of 42.8 meV and ND value of 2.8 × 1017 cm−3. After heat treatment in the O2 atmosphere at 1000 oC for 5 h, the color of the crystal changed from an orange color to transparent, and the ND value decreased to 4.3 × 1016 cm−3, while the ED value did not change. It can be deduced that the dominant donor in as-grown ZnO single crystals is a donor type native defect, which has a donor binding energy of about 42.8 meV.
배준우,임재원,김선중,Kouji Mimura,Takamichi Miyazaki,Masahito Uchikoshi,Minoru Isshiki 대한금속·재료학회 2010 METALS AND MATERIALS International Vol.16 No.3
ZrO2 dielectric layers were prepared by a two-step process, a deposition of pure Zr film with and without a negative substrate bias voltage and a subsequent oxidation of the Zr films. We focused on the effect of the negative substrate bias voltage on the Zr film deposition and the subsequent oxidation of the Zr films. As a result, the Zr film deposited at the substrate bias voltage of −50 V (Vs = −50 V) was found to have a high intensity peak of Zr (100) and a uniform and smooth surface. From the capacitance-voltage and currentvoltage measurements of the ZrO2 films, a high dielectric constant of 21 and the equivalent oxide thickness (EOT) of 2.6 nm were obtained on the oxidation layer of the Zr film deposited at Vs = −50 V. On the other hand, a low dielectric constant of 15 and the EOT of 3.6 nm was obtained on that of the Zr film deposited at Vs = 0 V. The leakage current density of the ZrO2 film (Vs = −50 V) was 5.69×10−4A/cm 2, and this value was much lower than the 1.21×10−4A/cm 2for the ZrO2 film (Vs = 0 V). It was found that the two-step process by subsequent oxidation after film deposition using a negative substrate bias voltage is useful for obtaining high-quality dielectric layers.
Effect of Ar/Ar-H<sub>2</sub> Plasma Arc Melting on Cu Purification
Lim, Jae-Won,Kim, Min-Seuk,Munirathnam, N. R.,Le, Minh-Tung,Uchikoshi, Masahito,Mimura, Kouji,Isshiki, Minoru,Kwon, Hyuk-Chon,Choi, Good-Sun The Japan Institute of Metals 2008 Materials transactions Vol.49 No.8
<P>Removal of impurities from Cu metal by Ar and Ar-20%H<SUB>2</SUB> plasma arc melting (PAM) has been carried out. Several impurities such as Li, Na, Mg, P, S, Cl, K, Ca, Zn, Pd, Pb and Bi in Cu were efficiently removed when only Ar plasma gas was used. Moreover, removal degrees for the above mentioned impurities were significantly increased after Ar-20%H<SUB>2</SUB>-PAM, especially for K, Zn and Pd. It was found that Ar-H<SUB>2</SUB> PAM showed an excellent effect to eliminate impurities with higher vapor pressures than that of Cu metal.</P>