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Plasma Nitrided Oxide와 Thermally Nitrided Oxide를 적용한 NMOSFET의 Flicker Noise와 신뢰성에 대한 비교 분석
이환희,권혁민,권성규,장재형,곽호영,이성재,고성용,이원묵,이희덕,Lee, Hwan-Hee,Kwon, Hyuk-Min,Kwon, Sung-Kyu,Jang, Jae-Hyung,Kwak, Ho-Young,Lee, Song-Jae,Go, Sung-Yong,Lee, Weon-Mook,Lee, Hi-Deok 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.12
In this paper, flicker noise characteristic and channel hot carrier degradation of NMOSFETs with plasma nitrided oixde (PNO) and thermally nitrided oxide (TNO) are analyzed in depth. Compared with NMOSFET with TNO, flicker noise characteristic of NMOSFET with PNO is improved significantly because nitrogen density in PNO near the Si/$SiO_2$ interface is less than that in TNO. However, device degradation of NMOSFET with PNO by channel hot carrier stress is greater than that with TNO although PMOSFET with PNO showed greater immunity to NBTI degradation than that with TNO in previous study. Therefore, concurrent investigation of the reliability as well as low frequency noise characteristics of NMOSFET and PMOSFET is required for the development of high performance analog MOSFET technology.
Microfluidic Generation of Graphene Bubbles for Ultralight, Strong, and Superelastic Materials
Seon Ju Yeo(여선주),Min Jun Oh(오민준),Hyun Min Jun(전현민),Minhwan Lee(이민환),Jung Gun Bae(배중건),Yeseul Kim(김예슬),Kyung Jin Park(박경진),Seungwoo Lee(이승우),Daeyeon Lee(이대연),Byung Mook Weon(원병묵),Won Bo Lee(이원보),Seok J 대한기계학회 2020 대한기계학회 춘추학술대회 Vol.2020 No.8
Fluorine 주입에 따른 NMOSFET의 소자 특성 연구
권성규,권혁민,이환희,장재형,곽호영,고성용,이원묵,이성재,이희덕,Kwon, Sung-Kyu,Kwon, Hyuk-Min,Lee, Hwan-Hee,Jang, Jae-Hyung,Kwak, Ho-Young,Go, Sung-Yong,Lee, Weon-Mook,Lee, Song-Jae,Lee, Hi-Deok 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.1
In this paper, we investigated the device performance on fluorine implantation, hot carrier reliability and RTS (random telegraph signal) noise characteristics of NMOSFETs. The capacitance of the fluorine implanted NMOSFET decreased due to the increase of the gate oxide thickness. RTS noise characteristics of the fluorine implated NMOSFET was improved approximately by 46% due to the decrease of trap density at Si/$SiO_2$ interface. The improved gate oxide quality also results in the longer hot carrier life time.
MIM 구조를 갖는 Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> 캐패시터의 정합특성 분석
장재형,권혁민,정의정,곽호영,권성규,이환희,고성용,이원묵,이성재,이희덕,Jang, Jae-Hyung,Kwon, Hyuk-Min,Jung, Yi-Jung,Kwak, Ho-Young,Kwon, Sung-Gyu,Lee, Hwan-Hee,Go, Sung-Yong,Lee, Weon-Mook,Lee, Song-Jae,Lee, Hi-Deok 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.1
In this paper, matching characteristic of MIM (metal-insulator-metal) capacitor with $Al_2O_3/HfO_2/Al_2O_3$ (AHA) structure is analyzed. The floating gate capacitance measurement technique (FGMT) was used for analysis of matching characteristic of the MIM capacitors in depth. It was shown that matching coefficient of AHA MIM capacitor is 0.331%${\mu}m$ which is appropriate for application to analog/RF integrated circuits. It was also shown that the matching coefficient has a more strong dependence on the width than length of MIM capacitor.
곽호영,권혁민,권성규,장재형,이환희,이성재,고성용,이원묵,이희덕,Kwak, Ho-Young,Kwon, Hyuk-Min,Kwon, Sung-Kyu,Jang, Jae-Hyung,Lee, Hwan-Hee,Lee, Song-Jae,Go, Sung-Yong,Lee, Weon-Mook,Lee, Hi-Deok 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.12
In this paper, reliability of the two sandwiched MIM capacitors of $Al_2O_3-HfO_2-Al_2O_3$ (AHA) and $SiO_2-HfO_2-SiO_2$ (SHS) with hafnium-based dielectrics was analyzed using two kinds of voltage stress; DC and AC voltage stresses. Two MIM capacitors have high capacitance density (8.1 fF/${\mu}m^2$ and 5.2 fF/${\mu}m^2$) over the entire frequency range and low leakage current density of ~1 nA/$cm^2$ at room temperature and 1 V. The charge trapping in the dielectric shows that the relative variation of capacitance (${\Delta}C/C_0$) increases and the variation of voltage linearity (${\alpha}$/${\alpha}_0$) gradually decreases with stress-time under two types of voltage stress. It is also shown that DC voltage stress induced greater variation of capacitance density and voltage linearity than AC voltage stress.
인간 자궁동맥 평할근세포에 존재하는 maxi-K 통로의 인산화를 통한 조절효과
이주헌,이무열,방효원,서경묵 중앙대학교 의과대학 의과학연구소 2000 中央醫大誌 Vol.25 No.1
Large conductance Ca^2+-activated K^+(maxi-K) channels were studies using inside-out patches of smooth muscle cells from human uterine artery. Single smooth muscle cells were obtained through proteolytic enzyme digestion and the patch clamp tecnique was used. The maxi-K channel showed a single channel conductance of about 150 pS in physiological concentration of K^+on both sides of the patch. The channel activity was dependent on intracellular Ca^2+ concentration change. ATP increased the channel activity dose-dependently and the effect was reversible. Okadaic acid(100 nM) increased the channel activity in the presence of ATP. From these results it is strongly suggested that maxi-K channels of human uterine arterial smooth muscle cells were modulated by protein kinase/phosphatase action through membrane-delimited pathway.