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Kyoung-Pil Ko,Rock-Kil Ko,Sung-Yun Lee,Ho-Kyum Kim,Seung-Hyun Moon,Sang-Soo Oh,Sang-Im Yoo IEEE 2009 IEEE transactions on applied superconductivity Vol.19 No.3
<P>We report a successful fabrication of GdBa2Cu3O7-delta (GdBCO) coated conductor on the ion-beam assisted deposition (IBAD) MgO template with a new buffer layer of BaZrO3 (BZO). The BZO films were deposited on the IBAD-MgO template at various substrate temperatures (T-S) and oxygen partial pressures (PO2) by pulsed laser deposition (PLD). In the broad ranges of T-S and PO2, all BZO layers showed almost uniform in-plane texture (Delta phi of similar to 6 degrees), implying that BZO is an attractive buffer layer. The surface roughness of BZO layer was sensitive to PO2 but not to T-S. On the optimally processed BZO buffer layer with 5.1 nm RMS roughness, GdBCO coated conductor deposited at T-S of 750 degrees C and PO2 of 400 mTorr exhibited Delta phi of 4.4 degrees, T-c,T-zero of 90.3 K, and J(c) of 1.35 MA/cm(2) (77 K, self-field).</P>
Ko, Pil-Seok,Park, Kyoung-Seok,Yoon, Yeo-Chang,Sheen, Mi-Hyang,Kim, Sam-Dong Elsevier 2015 THIN SOLID FILMS - Vol.589 No.-
<P><B>Abstract</B></P> <P>To reveal the cause for significant enhancement of dc current performance of the AlGaN/GaN high electron mobility transistors (HEMTs) with the spin-on-dielectric (SOD) SiO<SUB>x</SUB>-buffered passivation structure compared to the conventional Si<SUB>3</SUB>N<SUB>4</SUB> passivation deposited by plasma-enhanced vapor deposition (PECVD), we characterized the passivation interfaces using the cross-sectional transmission electron microscopy, cathodoluminescence, capacitance–voltage (C–V) characterizations, and Hall-effect measurements. The interface state density of PECVD Si<SUB>3</SUB>N<SUB>4</SUB> passivation was in the range of 10<SUP>12</SUP>–10<SUP>13</SUP> cm<SUP>−2</SUP> eV<SUP>−1</SUP>, which is one-order higher than that of the SOD (10<SUP>11</SUP>–10<SUP>12</SUP> cm<SUP>−2</SUP> eV<SUP>−1</SUP>) as measured by C–V measurements from the metal–insulator–semiconductor capacitors. Higher density of effective oxide charge density (especially dominant contribution of ionic mobile charge) was also derived from the PECVD Si<SUB>3</SUB>N<SUB>4</SUB> passivation. A well-resolved reduction of the electron Hall mobility of the Si<SUB>3</SUB>N<SUB>4</SUB> passivation compared to that of the perhydropolysilazane SOD passivation, which can be due to the higher-density interface states and trap charges, can answer the relative dc current collapse of our HEMT devices.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Spin-on-dielectric (SOD)-buffered passivation for AlGaN/GaN HEMTs </LI> <LI> Characterize the charge density and interface states using the C–V measurements </LI> <LI> SOD-buffered passivation minimizes surface states at the interface. </LI> <LI> DC performance of SOD-buffered structure is due to the interface characteristics. </LI> </UL> </P>
3상 자속결합형 초전도 한류기의 1선지락 사고시 전압증가 및 재폐로 동작에 따른 특성 분석
하경훈(Kyoung-Hun Ha),최효상(Hyo-Sang Choi),박형민(Hyoung-Min Park),조용선(Yong-Sun Cho),정병익(Byoung-Ik Jung),최수근(Soo-Geun Choi),오금곤(Geum-Gun Oh),김덕구(Duk-Gu Kim),고성필(Sung-pil Ko) 한국조명·전기설비학회 2010 한국조명·전기설비학회 학술대회논문집 Vol.2010 No.9월
The electric pewer demand has increased. As a result, we need to change a circuit breaker for bigger capacity one but it has sorre problems. In order to solve the difficulties according to change a circuit breaker, some alternative plans are suggested. One of them is to apply a SFCL in the electric pewer system The SFCL has the ability to reduce a fault current with an existing circuit breaker and it can protect an electric pewer system. In this paper, we composed a three phase flux-coupling type SFCL and analyzed a recovery characteristic according to reclosing operation with an increase in voltage. If the recovery time is delayed than we are expected, it could be a loss in the normal state. So we have to improve a recovery characteristic for application of SFCL to electric pewer svstem.
Kim, Sam-Dong,Ko, Pil-Seok,Park, Kyoung-Seok Institute of Physics 2013 Semiconductor science and technology Vol.28 No.3
<P>Various material properties of the perhydropolysilazane spin-on dielectric (PHPS SOD) were examined and analyzed in this study as potential inter-layer dielectrics (ILDs) integrated for Si circuits of 30 nm technology or beyond. The spin-coated PHPS (18.5 wt%) layers converted at 650 °C showed comparable but less perfect thermal conversion to silica than the films converted at 1000 °C, however exhibiting excellent gap filling (15 nm gap opening, aspect ratio (AR) of ∼23) and planarization (degree of planarization (DOP) = ∼73% for 800 nm initial step height, cusp angle = ∼16°) sufficient for the Si integration. PHPS SOD layers cured at 650 °C were integrated ILDs in the 0.18 µm Si front-end-of-the-line process, and the estimated hot-carrier reliability of n-channel metal oxide semiconductor transistors (ten years at a drain voltage of 1.68 V) had no significant difference from that of the transistors integrated with the conventional borophosposilicate glass ILDs. A modified contact pre-cleaning scheme using N<SUB>2</SUB>O plasma treatment also produced uniform and stable contact chain resistances from the SOD ILDs.</P>
Jung-Woo Lee,Kyoung-Pil Ko,Ho-Kyum Kim,Seung-Hyun Moon,Sang-Soo Oh,Sang-Im Yoo IEEE 2009 IEEE transactions on applied superconductivity Vol.19 No.3
<P>We investigated the <I>ex-situ</I> conversion process of amorphous precursor films for SmBa<SUB>2</SUB>Cu<SUB>3</SUB>O<SUB>7-delta</SUB> (SmBCO) coated conductors (CC). Amorphous precursor films were first deposited on the LaMnO<SUB>3</SUB>/homoepi-MgO/ IBAD-MgO/Y<SUB>2</SUB>O<SUB>3</SUB>/Al<SUB>2</SUB>O<SUB>3</SUB>/Hastelloy substrate by e-beam co-evaporation and subsequently crystallized to the superconducting phase at various post-annealing temperatures in two different reduced oxygen pressures. In 100 ppm of O<SUB>2</SUB> in Ar, <I>c</I>-axis oriented SmBCO grains with minor a-axis oriented grains were grown at 825degC whereas polycrystalline SmBCO film with some <I>a</I> -axis oriented grains was formed at 800degC. In the temperature region of 825 ~ 850degC, protruded spots were observed on the sample surface. In 6 ppm of O<SUB>2</SUB> in Ar, SmBCO film composed of <I>a</I>-axis oriented SmBCO grains with partial c-axis oriented grains were obtained at 700degC but other phases were formed above 725degC. The SmBCO sample grown at 700degC exhibited <I>Tc</I> <SUB>,zero</SUB> value of 90.2 K. However, its <I>Jc</I> value at 77 K was negligibly small due to the formation of <I>a</I>-axis oriented grains.</P>