C49 $TiSi_2$상의 에피구조 및 상안정성

전형탁,Jeon, Hyeong-Tak,Nemanich, R.J. 한국재료학회 1994 한국재료학회지 Vol.4 No.2

초청장 Si(111)기탄상에 초고진공 챔버에서 Ti을 증착하여 $TiSi_{2}$를 에피층으로 성장시켰다. 재구성된 (reconstructed) Di(111)표면에 상온에서 50$\AA$ 두께의 Ti을 증착한 후 $100^{\circ}C$간격으로 $800^{\circ}C$까지 열처리 하였다. $TiSi_{2}$박막의 구조는 전자회절 패턴 분석을 통하여 준안정상인 C49상임을 확인하였다. SEM 사진은 세가지 형태의 island를 보이고 있다. 각 island 는 단결정이며 그 구조는 서로 다른 결정학적 방향을 갖는 에피구조이다. 이러한 TiSi$_{2}$ island[112]C49 TiSi$_{2}$/[110]Si, (021) C49 $TiSi_{2}$/(111)Si의 방향관계를 가지고 있다. Epitaxial TiSiz films have been grown by UHV deposition of Ti on atomically clean Si(ll1)- orientated substrates. The Ti film of 50$\AA$ was deposited on the reconstructed Si(ll1) surface at room temperature. The sample was annealed up to $800^{\circ}C$ in $100^{\circ}C$ increments. The structure of the TiSiL films have been identified as the C49 metastable phase by electron diffraction patterns. Scanning electron microscopy( SEM) shows three different types of Tiksilicide island morphologies. The individual island structures are single crystal and are considered to be epitaxy with different crystallographic orientations. The orientational relationships of the $TiSi_{2}$ islands is given by [ 172 1 C49 $TiSi_{2}$//[110] Si and (021) C49 $TiSi_{2}$// (111)Si.

국제학술회의 참관기 - 미국 진공학회 학술대회

전형탁,Jeon, Hyeong-Tak 한국과학기술단체총연합회 1997 과학과 기술 Vol.30 No.12

지난 10월 20일~24일 미국의 서부 산호세에서 열린 미국진공학회 학술대회에 4명의 대학원생과 함께 참석하여 2편의 논문을 발표한 한양대 금속공학과 전형탁교수의 학술대회 참관기를 싣는다.

Free Radical-Initiated Peptide Sequencing Mass Spectrometry for Phosphopeptide Post-translational Modification Analysis

Jang, Inae,Jeon, Aeran,Lim, Suk Gyu,Hong, Duk Ki,Kim, Min Soo,Jo, Jae Hyeong,Lee, Sang Tak,Moon, Bongjin,Oh, Han Bin Springer New York LLC 2019 Journal of the American Society for Mass Spectrome Vol.30 No.3

<P>Free radical-initiated peptide sequencing mass spectrometry (FRIPS MS) was employed to analyze a number of representative singly or doubly protonated phosphopeptides (phosphoserine and phosphotyrosine peptides) in positive ion mode. In contrast to collision-activated dissociation (CAD) results, a loss of a phosphate group occurred to a limited degree for both phosphoserine and phosphotyrosine peptides, and thus, localization of a phosphorylated site was readily achieved. Considering that FRIPS MS supplies a substantial amount of collisional energy to peptides, this result was quite unexpected because a labile phosphate group was conserved. Analysis of the resulting peptide fragments revealed the extensive production of <I>a</I>-, <I>c</I>-, <I>x</I>-, and <I>z</I>-type fragments (with some minor <I>b</I>- and <I>y</I>-type fragments), suggesting that radical-driven peptide fragmentation was the primary mechanism involved in the FRIPS MS of phosphopeptides. Results of this study clearly indicate that FRIPS MS is a promising tool for the characterization of post-translational modifications such as phosphorylation.</P> [FIG OMISSION]</BR>

금속 불순물 Ca이 Si 기판의 표면 미세 거칠기에 미치는 영향

최형석,전형탁,Choe, Hyeong-Seok,Jeon, Hyeong-Tak 한국재료학회 1999 한국재료학회지 Vol.9 No.5

In this study, we focus on Ca contaminant which affects on the roughness Si substrate after thermal process. The initial Si substrates were contaminated intentionally by using a standard Ca solution. The contamination levels of Ca impurity were measured by TXRF and the chemical composition of that was analyzed by AES. Then we gre the thermal oxide to investigate the effect of Ca contaminants. The microroughness of the Si surface, the thermal oxide surface, and the surface after removing the thermal oxide were measured to examine the electrical characteristics. The initial substrates that were contaminated with the standard solution of Ca exhibited the contamination levels of 10\ulcorner~10\ulcorneratoms/$\textrm{cm}^2$ which was measured by TXRF. The Ca contaminants were detected by AES and exhibited the peaks of Ca, SI, C and O.After intentional contamination, the surface microroughness of this initial substrate was increased from $1.5\AA$ to 4$\AA$ as contamination levels became higher. The microroughness of the thermal oxide surfaces of both contaminated and bare Si substrates exhibits similar values. But the microroughness of the contaminated$ Si/SiO_2$ interface was increased as contamination increased. The thermal oxide of contaminated substrate exhibited the small minority carrier diffusion length, low breakdown voltage, and slightly high leakage current.

Cyclopalladated azido complexes containing <i>C</i>,<i>N</i>-donor (HC∼N = 2-(2′-thienyl)pyridine, azobenzene, 3,3′-dimethyl azobenzene, <i>N</i>,<i>N′</i>-dimethylbenzylamine, 2-phenylpyridine) ligands: reactivity towards organic unsaturated compoun

Lee, Kyung-Eun,Jeon, Hyeong-Tak,Han, Sam-Yong,Ham, Jungyeob,Kim, Yong-Joo,Lee, Soon W. Royal Society of Chemistry 2009 Dalton Transactions Vol.2009 No.33

<P>Cyclopalladated azido dimers having various <I>C</I>,<I>N</I>-donor ligands, [Pd(μ-N<SUB>3</SUB>)(<I>C</I>,<I>N</I>-L<SUP><I>n</I></SUP>)]<SUB>2</SUB> (L<SUP>1</SUP>H = 2-(2′-thienyl)pyridine; L<SUP>2</SUP>H = azobenzene; L<SUP>3</SUP>H = 3,3′-dimethylazobenzene; L<SUP>4</SUP>H = <I>N</I>,<I>N′</I>-dimethylbenzylamine; L<SUP>5</SUP>H = 2-phenylpyridine), underwent cleavage with tertiary (or chelating) phosphines to form the cyclopalladated [Pd(N<SUB>3</SUB>)(PR<SUB>3</SUB>)(<I>C</I>,<I>N</I>-L)], the σ-bonded [Pd(N<SUB>3</SUB>)(PR<SUB>3</SUB>)<SUB>2</SUB>(<I>C</I>-L)], or the dinuclear-cyclopalladated [PdN<SUB>3</SUB>(PR<SUB>3</SUB>)(<I>C</I>,<I>N</I>-L)]<SUB>2</SUB>(μ-P∼P) complexes. In particular, treating [Pd(μ-N<SUB>3</SUB>)(<I>C</I>,<I>N</I>-L)]<SUB>2</SUB> with the basic chelating phosphine (depe or dmpe) produced the homoleptic bis(chelating) complex [Pd(<I>C</I>,<I>N</I>-L<SUP><I>n</I></SUP>)<SUB>2</SUB>] (<I>n</I> = 1–3). Complex [Pd(N<SUB>3</SUB>)(PR<SUB>3</SUB>)(<I>C</I>,<I>N</I>-L<SUP>4</SUP>)] or [Pd(N<SUB>3</SUB>)(PR<SUB>3</SUB>)<SUB>2</SUB>(<I>C</I>-L<SUP>4</SUP>)] reacted with aryl isocyanides to selectively give the imidoyl [Pd(N<SUB>3</SUB>)(–C&z.dbd;N–Ar)(PR<SUB>3</SUB>)(<I>N</I>-L<SUP>4</SUP>)] or the imidoyl carbodiimido complex [Pd(N&z.dbd;C&z.dbd;N–Ar)(–C&z.dbd;N–Ar)(PR<SUB>3</SUB>)(<I>N</I>-L<SUP>4</SUP>)], which was formed by the CN–Ar insertion into the orthometallated Pd–C bond on the phenyl moiety or the interaction into the Pd–N<SUB>3</SUB> bond of the supporting ligand. In addition, reactions of [Pd(N<SUB>3</SUB>)(PR<SUB>3</SUB>)<SUB>2</SUB>(<I>C</I>-L<SUP><I>n</I></SUP>)] (<I>n</I> = 1, 2, 4) with R–NCS {R = <I>i</I>-Pr, C<SUB>6</SUB>H<SUB>4</SUB>–NCS, (CH<SUB>3</SUB>)<SUB>3</SUB>Si} gave the <I>S</I>-coordinated tetrazole–thiolato Pd(<SMALL>II</SMALL>) complexes. Finally, the catalytic activity of the cyclopalladated azido complexes was evaluated.</P> <P>Graphic Abstract</P><P>Various cyclopalladated azido complexes containing <I>C</I>,<I>N</I>-donor ligands were prepared and their chemical reactivities were examined. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=b907324h'> </P>

Facile Oxidative Addition of Organic Halides to Heteroleptic and Homoleptic Pd⁰–N‐Heterocyclic Carbene Complexes

Lee, Jung‐,Hyun,Jeon, Hyeong‐,Tak,Kim, Yong‐,Joo,Lee, Kyung‐,Eun,Ok Jang, Young,Lee, Soon W. WILEY‐VCH Verlag 2011 European journal of inorganic chemistry Vol.2011 No.11

<P><B>Abstract</B></P><P>Novel heteroleptic Pd<SUP>0</SUP> complexes with an N‐heterocyclic carbene (NHC) ligand [(Me<SUB>3</SUB>P)Pd(NHC)] (NHC = IPr, <B>1</B>; SIPr, <B>2</B>) were obtained from [Pd(CH<SUB>2</SUB>=CHPh)(PMe<SUB>3</SUB>)<SUB>2</SUB>] and an equivalent of NHC [NHC = 1,3‐bis(2,6‐diisopropylphenyl)imidazol‐2‐ylidene (IPr) or 1,3‐bis(2,6‐diisopropylphenyl)‐4,5‐dihydroimidazol‐2‐ylidene (SIPr)]. Further treatments of complexes <B>1</B> and <B>2</B> with an additional equimolar NHCafforded the corresponding bis(NHC)–Pd<SUP>0</SUP> complexes [Pd(NHC)<SUB>2</SUB>] (NHC = IPr, <B>3</B>; SIPr, <B>4</B>). Complexes <B>1</B>–<B>4</B> readily reacted with dichloromethane or chloroform to give C–Cl oxidative addition products. In addition, the reactivity of complex <B>2</B> toward other organic halides such as bromobenzene, <I>trans</I>‐1,2‐dichloroethylene, and 5,5′‐dibromo‐2,2′‐bithiophene to produce the corresponding oxidative addition products was investigated. Finally, the ligand replacement of complex <B>1</B> with a chelating phosphane was examined.</P>

Si기판 세정조건에 따른 산화막의 특성연구

전형탁,강응렬,조윤성,Jeon, Hyeong-Tak,Gang, Eung-Ryeol,Jo, Yun-Seong 한국재료학회 1994 한국재료학회지 Vol.4 No.8

Gate oxide의 특성은 세정공정에서 사용된 last세정용액에 큰 영향을 받는다. Standard RCA, HF-last, SCI-last, and HF-only 공정들은 gate oxidation하기 전 본 실험에서 행해진 세정공정들이다. 세정공정을 마친 Si기판들은 oxidation furnace에서 $900^{\circ}C$로 thermal oxidation공정을 거치게 된다. 100$\AA$의 gate oxide를 성장시킨 후 lifetime detector, VPD, AAS, SIMS, TEM, 그리고 AFM고 같은 분석장비를 이용하여 oxide의 특성을 평가했다. HF-last와 HF-only 공정에 의해 금속 불순물들이 매우 효과적으로 제거됐음을 알 수 있었다. Oxide의 표면 및 계면 형상은AFM과 TEM 측정을 통하여 관찰하였다. 표면거칠기는 SCI 세정용액을 사용한 splits 실험에서 불균일함이 관찰되었고 HF-only세정공정을 거친 시편 및 계면이 가장 smooth했다. The characteristics of gate oxide significantly depend on the last chemical solution used in cleaning process. The standard RCA, HF-last, SC1-last, and HF-only processes are the pre-gate oxide cleaning processes utilized in this experiment. Cleaning process was followed by thermal oxidation in oxidation furnace at $900^{\circ}C$. A 100$\AA$ gate oxide was grown and characterized with using lifetime detector, VPD AAS, SIMS, TEM, and AFM. The results of HF-last and HF-only were shown to be very effective to remove the metallic impurities. And these two splits also showed long minority carrier lifetimes. The surface and interface morphologies of the oxide were examined with AFM and TEM. The rough surface morphologies were observed with the cleaning splits containing the SC1 solution. The smooth surface and interface was observed with the HF-only cleaning process.

시멘트 제조 공정에서의 염소 바이패스 시스템에 대한 CFD 해석 연구

전지민 ( Ji-min Jeon ),신어진 ( Eo-jin Shin ),임정환 ( Jung-hwan Im ),이명종 ( Myeong-jong Lee ),고형탁 ( Hyeong-tak Ko ),오세천 ( Se-cheon Oh ),이구회 ( Gu-hoe Lee ),김재형 ( Jae-hyung Kim ),김우태 ( Woo-tae Kim ),신정진 ( Jeong- 한국폐기물자원순환학회 2023 한국폐기물자원순환학회 추계학술발표논문집 Vol.2023 No.0

액정 디스플레이(LCD) 판넬유리 운반로봇의 진동저감에 대한 연구

탁태오,김헌영,전형호,Tak, Tae-O,Kim, Heon-Yeong,Jeon, Hyeong-Ho 한국정보디스플레이학회 2004 인포메이션 디스플레이 Vol.5 No.3

리모트 수소 플라즈마를 이용한 Si 기판 위의 Cu 불순물 제거

이종무,전형탁,박명구,안태항,Lee, Jong-Mu,Jeon, Hyeong-Tak,Park, Myeong-Gu,An, Tae-Hang 한국재료학회 1996 한국재료학회지 Vol.6 No.8

리모트 수소 플라즈마를 이용하여 Si 기판 위의 구리 오염의 제거 효과에 관하여 조사하였다. 최적의 공정 조건을 찾기 위하여 Si 기판을 1ppm ${CuCI}_{2}$ 표준 화학 용액으로 인위적으로 오염시킨 후 rf power와 세정시간, 거리 (수소플라즈마 중심에서 Si 기판표면까지의 거리)등의 공정 변수를 변화시키며 리모트 수소 플라즈마 세정을 실시하였다. 리모트 수소 플라즈마 세정 후 Si 표면의 분석을 위하여 TXRF(total x-ray reflection fluorescence)와 AFM(atomic force microscope)측정을 실시하였다. 리모트 수소 플라즈마 세정이 Cu의 제거에 효과적이며 Si 표면의 거칠기에 나쁜 영향을 주지 않음을 TXRF와 AFM 분석결과로부터 알 수 있었다. Cu 불순물의 흡착 메커니즘은 산화 환원 전위 이론으로 설명될 수 있으며, Cu 불순물의 제거 메커니즘은 XPS(x-ray photoelectron spectroscopy)분석결과를 근거로 하여 다음과 같이 설명할 수 있다. :먼저 Cu 이온이 Si 표면에 흡착되어 화학적 산화막을 생성한다. 그 다음, 수소 플라즈마 중의 반응성이 강한 수소이온이 이 산화막을 분해시켜 제거하며 Cu 불순물은 산화막이 제거될 때 함께 제거된다. Removal of Cu impurities on Si substrates using remote H-plasma was investigated. Si substrates were intentionally contaminated by 1ppm ${CuCI}_{2}$, standard chemical solution. To determine the optimal process condition, remote H-plasma cleaning was conducted varying the parameters of rf power, cleaning time and remoteness(the distance between the center of plasma and the surface of Si substrate). After remote H-plasma cleaning was conducted, Si surfaces were analysed by TXRF(total x-ray reflection fluorescence) and AFM(atomic force microscope). The concentration of Cu impurity was reduced by more than a factor of 10 and its RMS roughness was improved by more than 30% after remote H-plasma cleaning. TXRF analysis results show that remote H-plasma cleaning is effective in eliminating Cu impurity on Si surface when it is performed under the optimal process condition. AFM analysis results also verifies that remote H-plasma cleaning makes no damage to the Si surface. The deposition mechanism of Cu impurity may be explained by the redox potential(oxidation-reduction reaction potential) theory. Based on the XPS analysis results we could draw a conclusion that Cu impurities on the Si substrate are removed together with the oxide by a "lift-off" mechanism when the chemical oxide( which forms when Cu ions are adsorbed on the Si surface) is etched off by reactive hydrogen atoms.gen atoms.