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서주석,이홍우 한국의사결정학회 2002 경영과학연구 Vol.11 No.-
Six sigma quality management is rigorous, focused and highly effective implementation of proven quality principles and techniques. Accordingly, Six sigma quality management incorporates successful factors which is strategy, project, professional, management and support system. The study analyses on the relation of performance and a successful factors in six sigma quality management. The study surveys the fields about six sigma quality management. The results are the following. First, The performance of Six sigma relates to the strategy. Second, The performance of Six sigma relates to management.
정규호,임현식,Hongwoo Seo,박재완,이전국,MinKyu Yang,Nambin Kim,Yongmin Kim 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.3
We have investigated the electrical transport in a Pt/Cr-doped SZO/SRO thin film, which is one of the candidate materials for a resistive RAM (RRAM), deposited by using pulsed laser deposition (PLD) as a function of temperature. A clear current switching between low-resistance ON and highresistance OFF states is observed. As the temperature is lowered, the ON-to-OFF current ratio is increased. A pulsed voltage with a frequency of 10 Hz 1 kHz is also applied to explore the nonvolatile memory properties, and the transient time is estimated. Stable switching characteristics are observed over the entire range of temperatures and frequencies. Interestingly, the ON-to-OFF current ratio decreases with increasing frequency.
Temperature Dependence of Resistance Switching in Cr Doped SrZrO3 Thin Films
Mooyoung Kim,Hyungsang Kim,Hongwoo Seo,임현식,Jeon-Kook Lee,Kyooho Jung,Yongmin Kim,이전국 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.3
The temperature dependence of resistive switching of Cr 0.2at%-doped SrZrO3 (Cr:SZO) thin films grown on SrRuO3/Si(100) substrates by using radio frequency sputtering has been studied over the temperature range between 300 K and 10 K. The film has a polycrystalline structure. Good and reproducible ON and OFF resistive switching is observed. While the low-resistance ON state show a metallic behavior, the high-resistance OFF current shows a thermal activation behavior. Using an Arrhenius plot, we estimated the barrier height of the initial (before forming) and the OFF states to be 24.2 meV and 2.14 meV, respectively.
Nambin Kim,Woong Jung,Donghoon Shin,Hongwoo Seo,Hyungsang Kim,Hyunsik Im,Kyooho Jung,Soonkoo Kim,Sungchan Kim,Yongmin Kim 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.3
We investigated the (ballistic) current-voltage (I-V ) characteristics in a 100-nm ..-gate AlGaAs/InGaAs Pseudomorphic high-electron-mobility transistor (pHEMT) as a function of temperature for temperatures ranging from 300 K to 10 K and analyzed the transport in terms of carrier backscattering. We observed that the drain current in the linear region dramatically increased below 60 K due to reduced phonon scattering. The critical temperature where the drain current started to rapidly increase shifted to a higher value as the drain voltage was increased. These results are in good agreement with the ballistic transport theory in which low temperatures and high electric fields along the channel lead to enhanced ballistic transport due to a reduction in the backscattering probability. We also carried out self-consistent Schrodinger-Poisson band profile calculations to understand the experimental data.