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DongHun Lee,Hyun Lee,Hideto Imajo,Yuichi Yoshioka,Takeshi Kanashima,Masanori Okuyama 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.31
The electrical property of the interfacial layer is improved by fluorine treatment on HfO_2/Ge metal-insulator-semiconductor (MIS) device. The thin HfO_2 dielectric was prepared using a photo-assisted metal organic chemical vapor deposition (MOCVD) system. However, the fluorine was easily out-diffused after post metallization annealing (PMA) at high temperature. In this study, the post nitridation of the fluorinated HfO_2/Ge gate stack has been carried out by using nitrogen (N) radical treatment at high temperature (200˚C) to prevent the fluorine (F) diffusion. The interface traps such as poorly passivated dangling bonds and oxygen vacancies (V_0) near the interface were passivated by co-doping of F and N. Consequently, the dielectric property of HfO_2/Ge gate stack has been improved to hamper F out-diffusion. Therefore, it is suggested that N radical treatment following F_2-treatment is very useful solution for improving dielectric property of HfO_2/Ge gate stack.