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RISS 인기검색어
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- 저자 : E-Sul Kum (검색결과 2 건)
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최두진,김준규,E-Sul Kum,Sung Soon Kim,Hong Lim Lee,Young Woo Lee,Ji Yeon Park 한양대학교 세라믹연구소 2007 Journal of Ceramic Processing Research Vol.8 No.6
The silicon carbide (SiC) layer in tristructural isotropic (TRISO) coated fuel particles is a critical and essential layer for hydrogen production using high temperature gas cooled reactor (HTGR) since it is a protective layer against diffusion of metallic and gaseous fission products and provides mechanical strength for the fuel particle. In this study, SiC layers were deposited using a high temperature and high pressure horizontal hot wall chemical vapor deposition (CVD) system as an application of fluidized bed chemical vapor deposition (FB-CVD). Before the actual experiment, we performed computational simulations of the gas velocity, temperature profile and pressure in the reaction chamber with various process conditions. The simulation showed that the change of reactant states affects the growth rate at each position on the susceptor. As the deposition temperature increased, the microstructure, chemical composition and growth behavior changed and deposition rate increased. The simulation results were in good agreement with the experimental results. The silicon carbide (SiC) layer in tristructural isotropic (TRISO) coated fuel particles is a critical and essential layer for hydrogen production using high temperature gas cooled reactor (HTGR) since it is a protective layer against diffusion of metallic and gaseous fission products and provides mechanical strength for the fuel particle. In this study, SiC layers were deposited using a high temperature and high pressure horizontal hot wall chemical vapor deposition (CVD) system as an application of fluidized bed chemical vapor deposition (FB-CVD). Before the actual experiment, we performed computational simulations of the gas velocity, temperature profile and pressure in the reaction chamber with various process conditions. The simulation showed that the change of reactant states affects the growth rate at each position on the susceptor. As the deposition temperature increased, the microstructure, chemical composition and growth behavior changed and deposition rate increased. The simulation results were in good agreement with the experimental results.
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김준규,금이슬,최두진,이영우,박지연,Kim, Jun-Gyu,Kum, E-Sul,Choi, Doo-Jin,Lee, Young-Woo,Park, Ji-Yeon 한국세라믹학회 2007 한국세라믹학회지 Vol.44 No.10
The ZrC layer instead of SiC layer is a critical and essential layer in TRISO coated fuel particles since it is a protective layer against diffusion of fission products and provides mechanical strength for the fuel particle. In this study, we carried out computational simulation before actual experiment. With these simulation results, Zirconium carbide (ZrC) films were chemically vapor deposited on $ZrO_2$ substrate using zirconium tetrachloride $(ZrCl_4),\;CH_4$ as a source and $H_2$ dilution gas, respectively. The change of input gas ratio was correlated with growth rate and morphology of deposited ZrC films. The growth rate of ZrC films increased as the input gas ratio decreased. The microstructure of ZrC films was changed with input gas ratio; small granular type grain structure was exhibited at the low input gas ratio. Angular type structure of increased grain size was observed at the high input gas ratio.
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