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최진석,이원갑,김동수,최홍대,최재수,정지형,임광식,최원철,손병화,Choi, Jin-Seok,Lee, Won-Kap,Kim, Dong-Soo,Choi, Hong-Dae,Choi, Jae-Sue,Jung, Jee H.,Im, Kwang-Sik,Choi, Won-Chul,Son, Byeng-Wha 한국생약학회 2000 생약학회지 Vol.31 No.2
In order to screen new radical scavenging principle which is expected to be antiaging drug lead, we have investigated 1,1-diphenyl-2-picrylhydrazyl (DPPH) radical scavenging activity of the marine microalgae, greenalgae(10 speices), diatom (10 speices) and blue-green algae (10 speices). The significant activities$(IC_{50}:\;<100\;{mu}g/ml)$ were observed in 4 species of green algae (MA002, 006, 009, 010), 1 species of diatom (MA015) and 5 species of blue-green algae (MA017, 018, 019, 024, 025). Within the scope of family tested, MA009 $(IC_{50}:\;=78\;{mu}g/ml)$, MA015 $(IC_{50}:\;=38\;{mu}g/ml)$ and MA019 $(IC_{50}:\;=41\;{mu}g/ml)$ displayed the most significant activity. Among the marine microalgae tested at family level, cyanophycean blue-green algae was shown to be the most active family on screening of new bioactive compounds.
최진석,이현권,안성진,Choi, Jin Seok,Lee, Hyun-Kwuon,An, Sung Jin 한국재료학회 2014 한국재료학회지 Vol.24 No.5
Silica nano-powder (SNP) is an inorganic material able to provide high-performance in various fields because of its multiple functions. Methods used to synthesize high purity SNP, include crushing silica minerals, vapor reaction of silica chloride, and a sol-gel process using TEOS and sodium silicate solution. The sol-gel process is the cheapest method for synthesis of SNP, and was used in this study. First, we investigated the shape and the size of the silica-powder particles in relation to the variation of HCl and sodium silicate concentrations. After drying, the shape of nano-silica powder differed in relation to variations in the HCl concentration. As the pH of the solution increased, so did the density of crosslinking. Initially, there was NaCl in the SNP. To increase its purity, we adopted a washing process that included centrifugation and filtration. After washing, the last of the NaCl was removed using DI water, leaving only amorphous silica powder. The purity of nano-silica powder synthesized using sodium silicate was over 99.6%.
물유리를 이용한 나노실리카 제조 시 pH가 미치는 영향
최진석,안성진,Choi, Jin Seok,An, Sung Jin 한국재료학회 2015 한국재료학회지 Vol.25 No.4
Synthesis of nano-silica using water glass in a Sol-Gel process is one of several methods to manufacture nano-silica. In nano-silica synthesized from water glass, there are various metal impurities. However, synthesis of nano-silica using water glass in a Sol-Gel process is an interesting method because it is relatively simple and cheap. In this study, nano-silica was synthesized from water glass; we investigated the effect of pH on the synthesis of nano-silica. The morphology of the nanosilica with pH 2 was flat, but the surface of the nano-silica with pH 10 had holes similar to small craters. As a result of ICP-OES analysis, the amount of Na in the nano-silica with pH 2 was found to be 170 mg/kg. On the other hand, the amount of Na in the nano-silica with pH 10 was found to be 56,930 mg/kg. After calcination, the crystal structure of the nano-silica with pH 2 was amorphous. The crystal structure of the nano-silica with pH 10 transformed from amorphous to tridymite. This is because elemental Na in the nano-silica had the effect of decreasing the phase transformation temperature.
폴리스타이렌을 이용한 그래핀 합성 및 산화 붕소가 그래핀 합성에 미치는 영향
최진석,안성진,Choi, Jinseok,An, Sung Jin 한국재료학회 2018 한국재료학회지 Vol.28 No.5
Graphene is an interesting material because it has remarkable properties, such as high intrinsic carrier mobility, good thermal conductivity, large specific surface area, high transparency, and high Young's modulus values. It is produced by mechanical and chemical exfoliation, chemical vapor deposition (CVD), and epitaxial growth. In particular, large-area and uniform single- and few-layer growth of graphene is possible using transition metals via a thermal CVD process. In this study, we utilize polystyrene and boron oxide, which are a carbon precursor and a doping source, respectively, for synthesis of pristine graphene and boron doped graphene. We confirm the graphene grown by the polystyrene and the boron oxide by the optical microscope and the Raman spectra. Raman spectra of boron doped graphene is shifted to the right compared with pristine graphene and the crystal quality of boron doped graphene is recovered when the synthesis time is 15 min. Sheet resistance decreases from approximately $2000{\Omega}/sq$ to $300{\Omega}/sq$ with an increasing synthesis time for the boron doped graphene.
Octamethylcyclotetrasiloxane를 이용한 광섬유 클래드 프리폼 형성
최진석,이태균,박성규,이가형,전구식,안성진,Choi, Jinseok,Lee, Tae Kyun,Park, Seong Gyu,Lee, Ga Hyoung,Jun, Gu Sik,An, Sung Jin 한국재료학회 2018 한국재료학회지 Vol.28 No.1
There are various manufacturing processes for pure $SiO_2$ that is used as abrasives, chemicals, filters, and glasses, and in metallurgy and optical industries. In the optical fiber industry, to produce $SiO_2$ preform, $SiCl_4$ is utilized as a raw material. However, the combustion reaction of $SiCl_4$ has caused critical environmental issues, such as ozone deficiency by chlorine compounds, the greenhouse effect by carbon dioxide and corrosive gas such as hydrochloric acid. Thus, finding an alternative source that does not have those environmental issues is important for the future. Octamethylcyclotetrasiloxane (OMCTS or D4) as a chlorine free source is recently promising candidate for the $SiO_2$ preform formation. In this study, we first conducted a vaporizer design to vaporize the OMCTS. The vaporizer for the OMCTS vaporization was produced on the basis of the results of the vaporizer design. The size of the primary particle of the $SiO_2$ formed by OMCTS was less than 100 nm. X-ray diffraction patterns of the $SiO_2$ indicated an amorphous phase. Fourier-transform infrared spectroscopy analysis revealed the Si-O-Si bond without the -OH group.
실시간 XRD와 TEM을 이용한 MAPbI<sub>3</sub>의 온도 변화에 따른 구조 분석
최진석,엄지호,윤순길,Choi, Jin-Seok,Eom, Ji-Ho,Yoon, Soon-Gil 한국전기전자재료학회 2019 전기전자재료학회논문지 Vol.32 No.1
Methylammonium lead triiodide ($MAPbI_3$)-based perovskite solar cells potentially have potential advantages such as high efficiency and low-cost manufacturing procedures. However, $MAPbI_3$ is structurally unstable and has low phase-change temperatures ($30^{\circ}C$ and $130^{\circ}C$); it is necessary to solve these problems. We investigated the crystal structure and phase separation using real-time temperature-change X-ray diffraction, transmission electron microscopy, and electron energy loss spectroscopy. $MAPbI_3$ has a tetragonal structure, and at about $35^{\circ}C$ the c-axis contracts, transforming $MAPbI_3$ into the related cubic crystal structure. In addition, at $130^{\circ}C$, phase separation occurs in which $CH_3NH_2$ and HI at the center of the unit cell of the perovskite structure are extracted by gas, leavingand only $PbI_2$ of the three-component structure, is produced as the final solid product.
최진석,안성진,Choi, Jin Seok,An, Sung Jin 한국재료학회 2016 한국재료학회지 Vol.26 No.6
ZnO with wurtzite structure has a wide band gap of 3.37 eV. Because ZnO has a direct band gap and a large exciton binding energy, it has higher optical efficiency and thermal stability than the GaN material of blue light emitting devices. To fabricate ZnO devices with optical and thermal advantages, n-type and p-type doping are needed. Many research groups have devoted themselves to fabricating stable p-type ZnO. In this study, $As^+$ ion was implanted using an ion implanter to fabricate p-type ZnO. After the ion implant, rapid thermal annealing (RTA) was conducted to activate the arsenic dopants. First, the structural and optical properties of the ZnO thin films were investigated for as-grown, as-implanted, and annealed ZnO using FE-SEM, XRD, and PL, respectively. Then, the structural, optical, and electrical properties of the ZnO thin films, depending on the As ion dose variation and the RTA temperatures, were analyzed using the same methods. In our experiment, p-type ZnO thin films with a hole concentration of $1.263{\times}10^{18}cm^{-3}$ were obtained when the dose of $5{\times}10^{14}$ As $ions/cm^2$ was implanted and the RTA was conducted at $850^{\circ}C$ for 1 min.
Ag/Sn/Ag 샌드위치 구조를 갖는 Backside Metallization을 이용한 고온 반도체 접합 기술
최진석,안성진,Choi, Jinseok,An, Sung Jin 한국마이크로전자및패키징학회 2020 마이크로전자 및 패키징학회지 Vol.27 No.1
The backside metallization process is typically used to attach a chip to a lead frame for semiconductor packaging because it has excellent bond-line and good electrical and thermal conduction. In particular, the backside metal with the Ag/Sn/Ag sandwich structure has a low-temperature bonding process and high remelting temperature because the interfacial structure composed of intermetallic compounds with higher melting temperatures than pure metal layers after die attach process. Here, we introduce a die attach process with the Ag/Sn/Ag sandwich structure to apply commercial semiconductor packages. After the die attachment, we investigated the evolution of the interfacial structures and evaluated the shear strength of the Ag/Sn/Ag sandwich structure and compared to those of a commercial backside metal (Au-12Ge).