국토공간구조의 변모

주성재 대한국토도시계획학회 1995 도시정보 Vol.14 No.12

AI 이온 주입된 p-type 4H-SiC에 형성된 Ni/AI 오믹접촉의 전기 전도 특성

주성재,송재열,강인호,방욱,김상철,김남균,이용재,Joo, Seong-Jae,Song, Jae-Yeol,Kang, In-Ho,Bahng, Wook,Kim, Sang-Cheol,Kim, Nam-Kyun,Lee, Yong-Jae 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.9

Ni/Al ('/' denotes deposition sequence) contacts were deposited on Al-implanted 4H-SiC for ohmic contact formation, and the conduction properties were characterized and compared with those of Ni-only contacts. The thicknesses of the Ni and Al thin film were 30 nm and 300 nm, respectively, and the films were sequentially deposited bye-beam evaporation without vacuum breaking. Rapid thermal anneal (RTA) temperature was varied as follows : $840^{\circ}C$, $890^{\circ}C$, and $940^{\circ}C$. The specific contact resistivity of the Ni contact was about $^{\sim}2\;{\pm}\;10^{-2}\;{\Omega}{\cdot}cm^2$, However, with the addition of Al overlayer, the specific contact resistivity decreased to about $^{\sim}2\;{\pm}\;10^{-4}\;{\Omega}{\cdot}cm^2$, almost irrespective of RTA temperature. X-ray diffraction (XRD) analysis of the Ni contact confirmed the existence of various Ni silicide phases, while the results of Ni/Al contact samples revealed that Al-contaning phases such as $Al_3Ni$, $Al_3Ni_2$, $Al_4Ni_3$, and $Ab_{3.21}Si_{0.47}$ were additionally formed as well as the Ni silicide phases. Energy dispersive spectroscopy (EDS) spectrum showed interfacial reaction zone mainly consisting of Al and Si at the contact interface, and it was also shown that considerable amounts of Si and C have diffused toward the surface. This indicates that contact resistance lowering of the Ni/Al contacts is related with the formation of the formation of interfacial reaction zone containing Al and Si. From these results, possible mechanisms of contact resistance lowering by the addition of Al were discussed.

Al 이온 주입된 p-type 4H-SiC에 형성된 Ni/Ti/Al Ohmic Contact의 전기적 특성

주성재,송재열,강인호,방욱,김상철,김남균,Joo, Sung-Jae,Song, Jae-Yeol,Kang, In-Ho,Bahng, Wook,Kim, Sang-Cheol,Kim, Nam-Kyun 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.11

Ni/Ti/Al multilayer system ('/'denotes the deposition sequence) was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Ni 30 nm / Ti 50 nm / Al 300 nm layers were sequentially deposited by e-beam evaporation on the 4H-SiC samples which were implanted with Al (norminal doping concentration = $4\times10^{19}cm^{-3}$) and then annealed at $1700^{\circ}C$ for dopant activation. Rapid thermal anneal (RTA) temperature for ohmic contact formation was varied in the range of $840\sim930^{\circ}C$. Specific contact resistances were extracted from the measured current vs. voltage (I-V) data of linear- and circular transfer length method (TLM) patterns. In constrast to Ni contact, Ni/Ti/Al contact shows perfectly linear I-V characteristics, and possesses much lower contact resistance of about $2\sim3\times10^{-4}\Omega{\cdot}cm^2$ even after low-temperature RTA at $840^{\circ}C$, which is about 2 orders of magnitude smaller than that of Ni contact. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance. X-ray diffraction (XRD) analysis indicated the existence of intermetallic compounds of Ni and Al as well as $NiSi_{1-x}$, but characteristic peaks of $Ti_{3}SiC_2$, a probable narrow-gap interfacial alloy responsible for low-resistance Ti/Al ohmic contact formation, were not detected. Therefore, Al in-diffusion into SiC surface region is considered to be the dominant mechanism of improvement in conduction behavior of Ni/Ti/Al contact.

Ta 도핑된 Zr0.6-xTi0.4TaxNiSn n형 하프-호이슬러 소재의 열전특성

주성재,손지희,장정인,민복기,김봉서 대한금속·재료학회 2022 대한금속·재료학회지 Vol.60 No.3

Half-Heusler (HH) thermoelectric materials are promising for mid- to high-temperature applications, and MNiSn (M = Ti, Zr, Hf) is a representative n-type HH alloy. In general, the M sites are mixed with isoelectronic elements Ti, Zr, and Hf, to lower the lattice thermal conductivity, and the Sn sites are doped with Sb to adjust the electron concentration. However, Hf is a rare element in earth’s crust, and the volatility of Sb makes it difficult to maintain the initial Sb amount during material synthesis. In this study, as an alternative, Ta was added in the M sites along with the host elements Ti and Zr to produce Hf-free Zr0.6-xTi0.4TaxNiSn alloys (0 ≤ x ≤ 0.04), and the effects of Ta doping on the thermoelectric properties were analyzed. The electrical conductivity of Zr0.6-xTi0.4TaxNiSn increased with Ta content, and the electron concentration increased almost linearly, reaching 5.6 × 1020 cm -3 at x = 0.04. By adding Ta, the maximum power factor also increased by approximately 17% to 3.94 × 10-3 W m-1K-2 at x = 0.02. The lowest lattice thermal conductivity (κlat) was observed at x = 0.02, reaching approximately 1.9 W m-1K-1 at 723 K, but overall, a dramatic decrease in κlat was not observed with Ta doping in Zr0.6-xTi0.4TaxNiSn. This is probably due to the existing effect of Zr/Ti mixing at the M sites, which enhances phonon scattering. A maximum figure of merit (zT) of 0.91 was obtained in Zr0.58Ti0.4Ta0.02NiSn at 873 K, which is a high value for ZrNiSn based Hf-free HH materials. In conclusion, Ta doping is a viable method to replace Sb doping in ZrNiSn based HH alloys.

외국의 행정수도 및 공공기관 이전 사례와 시사점

주성재 한국지역학회 2003 지역연구 Vol.19 No.2

21세기 지방도시의 역할 증대방안 : 21세기 경제주역 : 국가에서 도시로 바뀐다

주성재 대한지방행정공제회 1996 도시문제 Vol.31 No.331

기업도시 건설 ; 기업도시 건설의 의의와 필요성

주성재 대한지방행정공제회 2004 도시문제 Vol.39 No.433

Fabrication of 1.2 kV Ni/4H-SiC Junction Barrier-Controlled Schottky Diodes with a Single P+ Ion-Implantation Process

주성재,강인호,방욱,김상철,김남균 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.5

This paper presents the fabrication details and the characterization results of 4H-SiC junction barrier-controlled Schottky (JBS) diodes whose forward- and reverse-bias characteristics were optimized by using a single p+ ion implantation process. Ni was used for both Schottky and ohmic electrode formation and aluminum was implanted with multiple energies to form JBS grids and field-limiting rings (FLRs) simultaneously. The blocking voltage increased with decreasing FLR spacing and increasing doping concentration and a maximum wafer-level blocking voltage of 1500 V was obtained at an optimal doping concentration of 5× 1018/cm3 and an optimal FLR spacing of 3μm. The on-resistance increased with decreasing JBS grid spacing, but the correlation was not outstanding and devices having FLRs and JBS grids with the above structural parameters were proven to have the most balanced forward and reverse characteristics. Packaged JBS diodes whose voltage and current ratings of 1.2 kV and 8 A were successfully demonstrated and specific on-resistances were ~3 mΩ·cm2 at current densities of 130 ~ 560 A/cm2. Schottky barrier height (SBH) was ~1.7 eV. The reverse leakage current density was about 1μA/cm2 at 1200 V. A linear I-V relationship was maintained even at the highest current density of 800 A/cm2. The reverse-recovery time (trr) was 8.8 ns and the reverse-recovery charge (Qrr) was 2.3 nC at a dI/dt of 167 A/μs. This paper presents the fabrication details and the characterization results of 4H-SiC junction barrier-controlled Schottky (JBS) diodes whose forward- and reverse-bias characteristics were optimized by using a single p+ ion implantation process. Ni was used for both Schottky and ohmic electrode formation and aluminum was implanted with multiple energies to form JBS grids and field-limiting rings (FLRs) simultaneously. The blocking voltage increased with decreasing FLR spacing and increasing doping concentration and a maximum wafer-level blocking voltage of 1500 V was obtained at an optimal doping concentration of 5× 1018/cm3 and an optimal FLR spacing of 3μm. The on-resistance increased with decreasing JBS grid spacing, but the correlation was not outstanding and devices having FLRs and JBS grids with the above structural parameters were proven to have the most balanced forward and reverse characteristics. Packaged JBS diodes whose voltage and current ratings of 1.2 kV and 8 A were successfully demonstrated and specific on-resistances were ~3 mΩ·cm2 at current densities of 130 ~ 560 A/cm2. Schottky barrier height (SBH) was ~1.7 eV. The reverse leakage current density was about 1μA/cm2 at 1200 V. A linear I-V relationship was maintained even at the highest current density of 800 A/cm2. The reverse-recovery time (trr) was 8.8 ns and the reverse-recovery charge (Qrr) was 2.3 nC at a dI/dt of 167 A/μs.

사회적 경제에 관한 경제지리학의 연구 주제

주성재,노경란,Choo, Sungjae,Roh, Kyeongran 한국경제지리학회 2018 한국경제지리학회지 Vol.21 No.2

Taking note of growing tendency of academic interests and policy applications with regard to social economy, this study aims to suggest economic geographical agenda for social economy. It is presumed that the orientation of social economy toward pursuing social value will exhibit unique spatial characteristics. Elements containing spatial implications have been identified through a review of hierarchial concepts including social innovation, social economy organization and social enterprise. Three approached are suggested as tools of understanding the spatial context of social economy: spatial characteristics inspiring social entrepreneurship, place-based context of decision-making by social economy organizations, and spaces formulated by interactions between the demand for solving social problems and the supply of economic resources. The investigation of social innovation clusters is required to focus on the differentiated characteristics from normal industrial clusters. It is also suggested that the concept of embeddedness be applied in the search of the essence and elements of social economy's ties with local community. 이 연구는 사회적 경제에 관한 학술적 관심과 정책적 적용이 증가하는 추세에 주목하여 사회적 경제를 공간적 관점에서 바라보는 지리학의 연구 주제를 정리하려는 목적으로 이루어졌다. 사회적 경제가 갖는 사회적 가치의 추구라는 지향성은 독특한 공간 특성을 나타낼 것이라 보았고, 이를 위해 사회혁신, 사회적 경제조직, 사회적 기업 등 관련 개념을 통해 공간적 의미를 갖는 요소를 도출하였다. 사회적 경제의 공간적 맥락을 이해하는 방법으로서 사회적 기업가정신이 발현되는 공간의 성격, 사회적 경제조직의 의사결정이 갖는 장소기반의 맥락, 사회적 문제 해결이라는 수요와 사회적 경제조직의 활동을 지원하는 공급의 특성이 상호작용하며 만들어가는 공간의 특성에 주목할 것이 제안된다. 사회혁신클러스터에 대해서는 기존의 산업클러스터와 차별화되는 특성을 밝히는 것이 중요함을 지적한다. 지역사회와 갖는 밀착의 본질, 당위성, 요소에 대해서는 착근성 개념을 적용할 것을 제안한다.

지명의 국제적 표준화 원리와 동해 표기 문제

주성재 서울大學校 社會科學大學 地理學科 2005 地理學論叢 Vol.45 No.-