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2004년 10월의 가을은 풍성했으며, 과학관련박물관의 미래는 우리 모두의 책임
조한희 한국박물관학회 2005 博物館學報 Vol.- No.9
세계박물관대회가 한국에서 열리게 된다는 소식에 벅차오르는 감격을 느끼던 것이 바로 어제의 일 같은 데 우리는 벌써 그 숨 가쁜 길을 달려 개최 1주년을 맞이하고 있다. ICOM은 어떤 대회인가? 1946년에 결성되어 현재 150여명의 회원을 거느린 아이콤은 세계 문화계의 핵심이 되는 인사 들의 인적 네트워크적 역할을 하고 빅k물관에 관한 모든 문제를 논의하고 이를 통해 박물관이 나아 7싸 하는 방향을 모색하는 세계박물관 활동을 흐름을 이끌어 나가는 역할을 맡고 있다.
선형방식과 스위칭 방식의 레귤레이터를 함께 구동하기 위한 Mode Selector
조한희,박경현,정준모,구용서,Cho, Han-Hee,Park, Kyeong-Hyeon,Jung, Jun-Mo,Koo, Yong-Seo 한국전기전자학회 2015 전기전자학회논문지 Vol.19 No.2
본 논문에서는 부하전류를 감지하여 스위칭 방식과 선형 방식의 레귤레이터를 동작하기 위한 mode selector를 제안한다. 제안된 mode selector는 선형 방식과 스위칭 방식으로의 모드 전환이 가능하며, 경부하 조건에서 낮은 효율을 갖는 스위칭 방식의 레귤레이터의 단점을 보완하고자 제안되었다. 경부하 조건에서는 선형 방식의 레귤레이터로 mode를 전환함으로써 경부하 상태에서도 높은 효율을 제공할 수 있다. 설계한 mode selector는 동부 하이텍의 $0.18{\mu}m$ CMOS 공정을 이용하였다. In this paper, we propose mode selector for operating a switching system and regulator of linear system to detect the load current. The proposed mode selector can be a mode switching of linear system and switching system, and it has been proposed to compensate for the disadvantages of regulator of switching system with low efficiency in light load conditions. At light load conditions, the mode selector is possible to provide a high efficiency in light load condition by switching the mode to the regulator of linear system. The mode selector was designed to using a Dongbu Hitek $0.18{\mu}m$ CMOS process.
조한희,이화룡,Jo, Han-Hee,Lee, Hwa-Ryong 한국교육시설학회 2011 敎育施設 Vol.18 No.6
This research aims at proposing the space planning and architectural guideline required in designing the Science High School. It investigates specific features of the science high school which are distinguished from the general high school and analyses the compositional figure of teachers and students, the teaching methods and its educational curriculum, especially the revised educational curriculum in 2009. Meanwhile, it explores the administrative systems and facilities of the existing science high schools through both the document survey and on-the-spot interview. Such endeavor results in proposing the space classification, the space composition methods and a classroom managing system, which would be suited to the science high school. Finally it presents the architectural guidelines for planning the special subject learning area that is composed of a special subject classroom, a specified lab, medial space, a project and research room and teacher's room. The result of this study could be the fundamental resources for programming the special purposed high school as well as the science high school building.
A Design of Wide-Bandwidth LDO Regulator with High Robustness ESD Protection Circuit
조한희,구용서 전력전자학회 2015 JOURNAL OF POWER ELECTRONICS Vol.15 No.6
A low dropout (LDO) regulator with a wide-bandwidth is proposed in this paper. The regulator features a Human Body Model (HBM) 8kV-class high robustness ElectroStatic Discharge (ESD) protection circuit, and two error amplifiers (one with low gain and wide bandwidth, and the other with high gain and narrow bandwidth). The dual error amplifiers are located within the feedback loop of the LDO regulator, and they selectively amplify the signal according to its ripples. The proposed LDO regulator is more efficient in its regulation process because of its selective amplification according to frequency and bandwidth. Furthermore, the proposed regulator has the same gain as a conventional LDO at 62 dB with a 130 kHz-wide bandwidth, which is approximately 3.5 times that of a conventional LDO. The proposed device presents a fast response with improved load and line regulation characteristics. In addition, to prevent an increase in the area of the circuit, a body-driven fabrication technique was used for the error amplifier and the pass transistor. The proposed LDO regulator has an input voltage range of 2.5 V to 4.5 V, and it provides a load current of 100 mA in an output voltage range of 1.2 V to 4.1 V. In addition, to prevent damage in the Integrated Circuit (IC) as a result of static electricity, the reliability of IC was improved by embedding a self-produced 8 kV-class (Chip level) ESD protection circuit of a P-substrate-Triggered Silicon Controlled Rectifier (PTSCR) type with high robustness characteristics.