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활성층 두께 및 열처리 온도에 따른 비정질 인듐갈륨징크옥사이드 박막트랜지스터의 전기적 특성 변화
백찬수,임기조,임동혁,김현후,Baek, Chan-Soo,Lim, Kee-Joe,Lim, Dong-Hyeok,Kim, Hyun-Hoo 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.7
We report on variations of electrical properties with different active layer thickness and post-annealing temperature in amorphous In-Ga-Zn-O (IGZO) thin-film transistors (TFTs). In particular, subthreshold swing (SS) of the IGZO-TFTs was improved as increasing the active layer thickness at an given post-annealing temperature, accompanying the negative shift in turn-off voltage. However, as increasing post-annealing temperature, only turn-off voltage was shifted negatively with almost constant SS value. The effect of the active layer thickness and post-annealing temperature on electrical properties, such as SS, field effect mobility and turn-off voltage in IGZO-TFTs has been explained in terms of the variation of trap density in IGZO channel layer and at gate dielectric/IGZO interface.
Pb complex perovskite 계 세라믹의 유전특성
채홍인,임기조,이정구,유영각 ( Hong In Chae,Kee Joe Lim,Jeong Gu Lee,Young Kag Yoo ) 충북대학교 산업과학기술연구소 1990 산업과학기술연구 논문집 Vol.4 No.2
Abstract_Roman In this study, we suggest new dieler:tric cornposition and their preparing rnethod The dielectric compositions which is compri*sed PMN-PZN-PLiW can be fired at a temperature between 1000 1050 C and ean thus be used with high silver cooten
재활용을 고려한 HDPE/EVA필름의 전계분포 및 체적저항특성 해석
이홍규,임기조,김용주,Lee, Hung-Kyu,Lim, Kee-Joe,Kim, Yong-Joo 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.9
Recently, CV, CN-CV and CNCV-W cable are used for HVDC transmission and distribution cable. However, XLPE which is used as insulation layer of power cable has thermosetting properties. It is very difficult to recycling. In this paper, we prepared HDPE/EVA film, which the blending ratio are 80:20, 70:30, 60:40, 50;50 respectively for the purpose of recycling. Main factor such as electric field distribution and its resistivity in insulation system affected on insulation performance and reliability for HVDC applications. Therefore, electric field distribution formed by space charge and characteristics of volume resistivity was currently investigated. We suggest the possibility of utilization for HVDC insulation layer from the results.