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신운기(Woonki Shin),이영균(Youngkyun Lee),정호빈(Hobin Jeong),조형호(Hyungho Jo),정해도(Haedo Jeong) 대한기계학회 2010 대한기계학회 춘추학술대회 Vol.2010 No.11
Cu CMP is a hybrid removal process performed by complicated chemical reaction and mechanical abrasion, which can make defects of its own such as a scratch, particle and dishing. The abrasive particles remain on the Cu surface, and become contaminations to make device yield and performance deteriorate. Especially, it is not so easy to remove particles in the down area such as scratch, deep trench and dishing. The paper deals with the correlation between dishing amount and cleaning ability according to Cu pattern size. For the experiment, a Cu CMP test was done to create a dishing, and followed by a PVA scrubbing of colloidal silica particles which are adhered on the recessed Cu patterns. The experimental result showed that residual particles increased with dishing amount. The particle removal efficiency normally decreases with time passed, since the adsorption condition of particle to Cu surface changes from physical to chemical.