農村 纓幼兒의 身體發育에 關한 評價

李誠國,金正根 대한보건협회 1976 대한보건연구 Vol.2 No.2

For the purpose of assessing physical growth and nutritional status of young rural children aged from 0 to 3 years old, 1,463 young children(Male: 734, Female: 729) registered at Chunseong Gun Community Health Service, Kangwon Province, were examined during the month of August, 1975. Some fir.dings of the survey were as follows: A. Anthropometric data 1) Comparing the mean values for body weight obtained with those of the Korean standards of the same age, the rural children showed no difference at infant period, but slightly heavier at toddler period in both sexes. 2) Comparing the mean values for height obtained with those of the Korean standards of the same age, the rural children were taller than Korean standard values of the same age, but smaller than Japanese children in both sexes. 3) The regression equations of weight on height were as follows; Male ; y=0.27x-10. 71(r=0.993, p<0.001) Female; y=0.25x-9.49 (r=0.995, p<0.001) 4) The regression equations of weight and height on mother's age by birth order were slightly different from each other in their regression coefficient, but not statistically significant B. Various indices about physical growth and development. 1) Relative weight shows the steady increase monthly. Male surpassed female throughout the period observed. 2) Rohrer's Indices were alike in male and female. 3) Kaup Indices were 1.5―1.8 in male and 1.5―1.6 in female. C. Prevalence of Protein-Calorie Malnutrition Children examined were divided into two groups, i.e., infant (up to the first birthday) and toddler(1 to 3 years old). (Percentages for four levels of malnutrition) The Harvard standard was used as the reference standard in this study. a) When the nutritional status of each child was classified, 1) by body weight value; the percentages for male and female of children attained standard growth were 71.0% (infant 85.0%, toddler 52.4%) and 53.2% (infant 67.9%, toddler 37.2), the first level of malnutrition were 20.7% (infant 11.5%, toddler 33.0%) and 27.4%(infant 21.0%, toddler 34.4%), the second level of malnutrition were 8.2% (infant 3.5%, toddler 14.3%) and 15.8% (infant 9.7%, toddler 22.3%), the third level of malnutrition were 0.1%(infant 0%, toddler 0.3%) and 3.6% (infant 1.3%, toddler 6.1%) respectively and the fourth level of malnutrition were not found. 2) by height value; the percentages for male and female of children attained standard growth were 93.6% (infant 99.3%, toddler 86.0%) and 87.7% (infant 98.7%, toddler 75.6%), the first level of malnutrition were 6.3% (infant 0.5%, toddler 14.0%), the second level of malnutrition were 0.1%(infant 0.2%, toddler 0%) and 0% respectively, the third, fourth level of malnutrition were not found. 3) by body weight in relation to height; the percentages for male and female of children attained standard growth were 60.3% (infant 49.9%, toddler 74.3%) and 56.5% (infant 50.3%, toddler 63.3%), the first level of malnutrition were 25.5% (infant 30.1%, toddler 19.4%) and 23.9% (infant 26.3%, toddler 21.2%), the second level of malnutrition were 12. 4% (infant 17.2%, toddler 6.0%) and 17.4% (infant 21.3%, toddler 13.2%), the third level of malnutrition were 1.4% (infant 2.1%, toddler 0.3%) and 1.9%(infant 1.8%, toddler 2.0%). the fourth level of malnutrition were 0.4% (infant 0.7%, toddler 0%) and 0.3% (infant 0.3%, toddler 0.3%) respectively. b) The nutritional status of each child according to the mother's age at parturition,was, 1) by weight value, significantly different between each mother's age group in the infant and toddler period. (P<0.01) 2) by height value, not significantly different between each mother's age group in the infant period, but significantly different in the toddler period. (P<0.01) c) The nutritional status of each child according to the birth rank i.e., first to second, third to fourth, and fifth or above was, 1) by weight value; significantly different between children of each birth order in the infant period (P<0.01), but not significantly different in the toddler period, although children of higher birth rank were slightly more of the underweight than those of lower birth rank. 2) by eight value; not different among children of each birth order.

차음 및 흡음에 대한 소고(차음편)

이성국,Lee, Seong-Guk 대한건축사협회 1979 建築士 Vol.1979 No.10

건축설비공사표준시방서 개요

이성국,Lee, Seong-Guk 대한건축사협회 1981 建築士 Vol.1981 No.2

정보사회의 도래

이성국,Lee, Seong-Guk 한국전자통신연구원 1982 전자통신 Vol.4 No.4

차음 및 흡음에 대한 소고(흡음편)

이성국,Lee, Seong-Guk 대한건축사협회 1979 建築士 Vol.1979 No.11

미래를 위한 선택(I)

이성국,이원웅,Lee, Seong-Guk,Lee, Won-Ung 한국전자통신연구원 1985 전자통신 Vol.7 No.3

미래는 과거와 현재역사의 연속이다. 미래를 정확히 예측한다거나 예견할 수는 없다. 신이 아닌이상 지시할 수도 없다. 문제는 우리가 미래에 대해서 얼마나 관심을 가지고 있느냐가 문제이다. 우리 사회의 특성을 나타내는 급격하고도 커다란 변화들은 역설적인 결과를 초래할 수 있다. "미래대안"을 예측함으로써 이러한 혼돈된 결과를 줄이는데 도움이 될 수 있을 것이다. 본고에서는 이러한 분야에서 세계적으로 명성이 있는 여덟명의 석학-Zbigniew Brzezinski, Herman Kahn, Anthony J. Wiener, Daniel Bell, Willis Harman, Dennis Meadows, Willam Brown 그리고 Leon Martel-들의 장기예측 방법들을 평가, 분석하여 "Options for The Future"란 책을 펴낸 Tomas E. Jones의 견해를 중심으로 미래연구의 시작과 개발 그리고 예측방법론들을 정리해 보았다.

HVPE GaN film의 성장과 결함

이성국,박성수,한재용 한국결정성장학회 1999 韓國結晶成長學會誌 Vol.9 No.2

HVPE 법으로 sapphire 기판 위에 두께 9$\mu\textrm{m}$의 GaN film을 성장하였다. Sapphire위에 직접 성장된 GaN film은 crack free로 mirror surface를 나타내었고 dislocation density는 $2{\times}10^9/cm^2$이었다.$SiO_2$ mask pattern을 사용하여 성장된 ELO GaN film도 대부분이 mirror surface를 나타내었으나 표면 일부에서 coalescence가 덜 이루어져 stripe 방향으로 hole이 존재하였다. ELO GaN film의 mask 윗부분은 window 부분에 비해 낮은 dislocation density를 나타냈다. 특히 mask center와 window사이 영역에서는 거의 dislocation이 없었다. ELO GaN film의 dislocation density는 평균 $8{\times}10^7/cm^2$.이었다. The 9 $\mu\textrm{m}$ GaN films on sapphire substrate were grown by Hydride vapor phase epitaxy. Dislocation density of these GaN films was measured by TEM. GaN film with crack free and mirror surface was directly grown on sapphire substrate. The dislocation density of this GaN film was $2{\times}10^9/cm^2$. The surface of GaN film on patterned GaN layer also presented a smooth mirror. But a part of GaN surface included holes because of incomplete coalescence. The dislocation density of GaN film above the mask region was lower than that in the window region. Especially, the dislocation density in the region between mask center and window region was close to dislocation free. The average dislocation density of ELO GaN was $8{\times}10^7/cm^2$.

ZnSe 단결정내에서의 전위거동

이성국,박성수,김준홍,한재용,이상학 한국결정성장학회 1997 韓國結晶成長學會誌 Vol.7 No.4

Dislocation behavior in the ZnSe crystal grown by seeded vapor transport was investigated. Etch pit shape with the ZnSe plane and dislocation arrangement were shown. Also the variation of the dislocation density in the crystal was disclosed. The dislocation density along the lateral growth direction was not changed but the dislocation density along the vertical growth direction was reduced as the crystal grew. The average dislocation density of the grown crystal was $4{\times}10^4 /\textrm{cm}^2$. Seeded vapor transport법에 의해 성장된 ZnSe 결정내에서 전위거동을 살펴보았다. (111)과 (100) ZnSe wafer의 etch pit 형상을 관찰하였고 성장된 결정이 높은 전위밀도를 가지면 전위들이 lineage와 cellular 두 가지 형태로 배열됨을 알았다. Seed로부터 측방성장된 부위에서 전위밀도의 변화는 없었으나 수직 성장방향으로는 전위밀도가 감소하였고, 같은 wafer내에서 전위밀도는 wafer center 지역의 전위밀도가 edge부위의 전위밀도 보다 낮았다. 성장된 결정의 평균 전위밀도는 $4{\times}10^4 /\textrm{cm}^2$이었다.

ZnSe 단결정 성장과 결정결함

이성국,박성수,김준홍,한재용,이상학 한국결정성장학회 1997 韓國結晶成長學會誌 Vol.7 No.1

직경 55 mm의 ZnSe 단결정을 수소분위기에서 seeded chemical vapor transport법에 의해 성장하였고, 성장 parameter들이 결정 결함에 미치는 영향을 조사하였다. Chemical etching에 의한 EPD 측정, X-ray rocking curve 측정, photolumlnescence 측정으로 성장된 단결정의 특성을 평가하였다. ZnSe single crystals were grown by seeded chemical vapor transport in $H_2$ atmosphere. The influence of the growth parameters on the crystal defect was investigated. The grown ZnSe single crystal was characterized by chemical etching, X-ray rocking curve and photoluminescenc e measurements.

융제법에 의한 Mn-Zn Ferrite 단결정성장에 관한 연구

이성국,오근호,강원호 한국세라믹학회 1987 한국세라믹학회지 Vol.24 No.5

Single crystals of Mn-Zn Ferrite were grown by slow cooling method using Na2B4O7 as flux agent. The effects of flux content and cooling rate on the types of crystals, and the relation between supersaturation and growth mechanism were studied. As a result, the types of grown crystals occurred as plate, hopper and octahedral crystals. The occurrence of these crystal types was dependent on flux content. The habit was found to correlate with the growth rate and supersaturation. The lateral growth of a dendritic crystal is related to the twin layer. The growth of crystals from borax melts mainly occurred by the layer-spreading growth following corner and edge nucleation caused by high supersaturation in the melt. Especially, the plate crystals were produced on top of the melts. The hopper and octahedral crystals occurred at lower supersaturation than the plate crystals.