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Copper 함량에 따른 Mo-Cu-N 박막의 미세구조 변화에 대한 연구
신정호(Jung Ho Shin),최광수(Kwang Soo Choi),왕계민(Qi Min Wang),김광호(Kwang Ho Kim) 한국표면공학회 2010 한국표면공학회지 Vol.43 No.6
Ternary Mo-Cu-N films were deposited on Si wafer substrates with various copper contents by magnetron sputtering method using Mo target and Cu target in Ar/N₂ gaseous atmosphere. As increasing N₂ pressure, the microstructure of Mo-N films changed from γ-Mo₂N of (111) having face-centered-cubic (FCC) structure to δ-MoN of (200) having hexagonal structure. Detailed the microstructures of the Mo-Cu-N coatings were studied by X-ray diffraction, scanning electron microscopy and field emission transmission electron microscope. The results indicated that the incorporation of copper into the growing Mo-N coating led to the Mo₂N and MoN crystallites were more well-distributed and refined and the copper existed in grain boundary. Ternary Mo-Cu-N films had a composite microstructure of the nanosized crystal crystalline γ-Mo₂N and δ-MoN surrounded by amorphous Cu₃N phase.