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SiN<sub>x</sub> 박막을 이용한 Si Nanodot의 형성
이장우,박익현,신별,정지원,Lee, Jang Woo,Park, Ik Hyun,Shin, Byul,Chung, Chee Won 한국공업화학회 2005 공업화학 Vol.16 No.6
Silicon nitride ($SiN_x$) 박막이 상온에서 $SiO_2/Si$ 기판 위에 반응성 직류 마그네트론 스퍼터링 방법에 의하여 증착되었다. 증착된 $SiN_x$ 박막의 조성은 x-ray photoelectron spectroscopy를 이용하여 분석되었으며 Si가 풍부한 $SiN_x$ 박막이 증착되었음을 확인할 수 있었다. 증착된 $SiN_x$ 박막은 annealing 온도와 시간을 변화하여 annealing 되었다. X-ray diffraction (XRD) 분석이 $SiN_x$ 박막 내에 Si의 결정화를 조사하기 위해서 수행되었고, 박막의 광학적 특성과 전기적 특성들이 Si nanodot의 형성을 확인하기 위하여 측정되었다. 그 결과로써, XRD 분석에서 Si으로 예상되어지는 peak을 관찰할 수 있었으며 annealing 시간과 온도가 증가함에 따라서 $SiN_x$ 박막의 photoluminescence intensity는 점진적으로 증가하는 것이 관찰되었다. Annealing 전과 후에 측정된 $SiN_x$ 박막의 capacitance-voltage 특성으로부터 $SiN_x$ 박막 내에 존재하는 Si nanodot에 의하여 electron이나 hole의 trap 효과가 나타남을 예상할 수 있었다. The deposition of silicon nitride ($SiN_x$) thin films was carried out on $SiO_2/Si$ substrate at room temperature by reactive dc magnetron sputtering. The analysis of deposited $SiN_x$ films using x-ray photoelectron spectroscopy indicated that the composition of $SiN_x$ films was Si-rich. The deposited $SiN_x$ thin films were annealed by varying annealing temperature and time. X-ray diffraction (XRD) analysis was performed in order to examine the crystallization of Si in $SiN_x$ thin films. The optical and electrical properties of $SiN_x$ thin films were measured for the observation of Si nanodot. As a result, we observed the XRD peaks that might be the Si crystals. As the annealing time and annealing temperature increased, the photoluminescence intensity of $SiN_x$ films gradually increased. The capacitance-voltage characteristics of $SiN_x$ film measured before and after annealing indicated that the trap effect of electrons or holes occurred due to the existence Si nanodots in the $SiN_x$ thin films.
차세대 자성 메모리에의 응용을 위한 나노미터 크기의 magnetic tunnel junction 패터닝
신별,박익현,정지원 한국공업화학회 2005 응용화학 Vol.9 No.1
High density plasma reactive ion etching of magnetic tunnel junction (MTJ) stack was performed in an inductively coupled plasma. The etch process of MTJ stack masked with the photoresist and electron beam resist was studied using Ar, Cl₂, BC1₃ and O₂ gas mixes and characterized in terms of etch profile and electrical properties. When MTJ stack was first etched down to CoFe free layer and the rest of MTJ stack was etched, the etch slope of MTJ stack was more vertical than MTJ stack etched by other methods. As Cl₂ concentration and process pressure increased and coil rf power and dc bias decreased, the electrical properties of MTJ stack were improved. BC1₃/Ar and Cl₂/Ar gases were more effective in obtaining steep slope of the etched MTJ stack than the any other gas. By using high density plasma etching of MTJ stack, steep etch slope and clean etch profile without redeposition could be obtained.
DC 마그네트론 스퍼터링에 의하여 중착된 IZO 박막의 특성
신별,정지원 한국공업화학회 2003 응용화학 Vol.7 No.2
The deposition of indium zinc oxide(IZO) thin films was carried out on glass substrate at room temperature by dc magnetron sputtering. The effects of dc power and deposition pressure were investigated in terms of physical and optical properties of IZO films. As the dc power increases, the transmittance gradually decreases. For the variation of deposition pressure, the transmittance is decreased with increasing deposition pressure. The observation of IZO films by atomic force microscopy(AFM) indicates that the microstructure and surface morphology of the films are responsible for the transmittance. It was demonstrated that IZO films with an optical transmission of 80∼90% in the visible spectrum could be prepared without post deposition annealing.