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반도체 클린룸용 배기 열회수식 에어와셔 시스템의 에너지절감에 관한 수치해석
송근수(Gen-Soo Song),김형태(Hyung-Tae Kim),유경훈(Kyung-Hoon Yoo),손승우(Seung-Woo Son),신대건(Dae-Kun Shin),김영일(Young-Il Kim) 대한설비공학회 2010 설비공학 논문집 Vol.22 No.10
In recent semiconductor manufacturing clean rooms, air washers are used to remove airborne gaseous contaminants from the outdoor air introduced into a clean room. Meanwhile, there is a large amount of exhaust air from a clean room. From an energy conservation point of view, heat recovery is useful for reducing the outdoor air conditioning load required to maintain a clean room. Therefore it is desirable to recover heat from the exhaust air and use it to cool or heat the outdoor air. In the present study, numerical analysis was conducted to evaluate the recovered heat of an exhaust air heat recovery type air washer system, which is the key part of an energy saving outdoor air conditioning system for semiconductor clean rooms. The present numerical results showed relatively good agreement with the available experimental data.
송근수(Gen-Soo Song),유경훈(Kyung-Hoon Yoo),조병하(Byung-Ha Cho) 대한기계학회 2008 대한기계학회 춘추학술대회 Vol.2008 No.5
Numerical analysis and experiment was conducted to investigate the atomic layer deposition(ALD) of silicon nitride using silicon tetrachloride and ammonia as precursors. The present study simulated the surface reactions for as-deposited Si₃N₄ as well as the kinetics for the reactions of SiCl₄ and NH₃ on the semiconductor wafer. The present study results showed that the ALD process is dependent on the activation constant. It was also shown that the low activation constant leads to the self-limiting reaction required for the ALD process. The comparison of the present numerical results with the present experimental results showed relatively good agreement between them. The inlet and wafer temperatures were 473 K and 823 K, respectively. The system pressure is 2 Torr.
Fabrication of a Transparent Electrode for a Flexible Organic Solar Cell in Atomic Layer Deposition
송근수(Song, Gen-Soo),김형태(Kim, Hyoung-Tae),유경훈(Yoo, Kyung-Hoon) 한국신재생에너지학회 2011 한국신재생에너지학회 학술대회논문집 Vol.2011 No.05
Aluminum-doped Zinc Oxide (AZO) is considered as an excellent candidate to replace Indium Tin Oxide (ITO), which is widely used as transparent conductive oxide (TCO) for electronic devices such as liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and organic solar cells (OSCs). In the present study, AZO thin film was applied to the transparent electrode of a channel-shaped flexible organic solar cell using a low-temperature selective-area atomic layer deposition (ALD) process. AZO thin films were deposited on Poly-Ethylene-Naphthalate (PEN) substrates with Di-Ethyl-Zinc (DEZ) and Tri-Methyl-Aluminum (TMA) as precursors and H₂O as an oxidant for the atomic layer deposition at the deposition temperature of 130?C. The pulse time of TMA, DEZ and H₂O, and purge time were 0.1 second and 20 second, respectively. The electrical and optical properties of the AZO films were characterized as a function of film thickness. The 300 nm-thick AZO film grown on a PEN substrate exhibited sheet resistance of 87{Omega}/square and optical transmittance of 84.3% at a wavelength between 400 and 800 nm.