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RISS 인기검색어
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- 저자 : 송근수(Gen-Soo Song) (검색결과 30 건)
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송근수(Gen-Soo Song),유경훈(Kyung-Hoon Yoo),조병하(Byung-Ha Cho) 대한기계학회 2008 대한기계학회 춘추학술대회 Vol.2008 No.5
Numerical analysis and experiment was conducted to investigate the atomic layer deposition(ALD) of silicon nitride using silicon tetrachloride and ammonia as precursors. The present study simulated the surface reactions for as-deposited Si₃N₄ as well as the kinetics for the reactions of SiCl₄ and NH₃ on the semiconductor wafer. The present study results showed that the ALD process is dependent on the activation constant. It was also shown that the low activation constant leads to the self-limiting reaction required for the ALD process. The comparison of the present numerical results with the present experimental results showed relatively good agreement between them. The inlet and wafer temperatures were 473 K and 823 K, respectively. The system pressure is 2 Torr.
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Fabrication of a Transparent Electrode for a Flexible Organic Solar Cell in Atomic Layer Deposition
송근수(Song, Gen-Soo),김형태(Kim, Hyoung-Tae),유경훈(Yoo, Kyung-Hoon) 한국신재생에너지학회 2011 한국신재생에너지학회 학술대회논문집 Vol.2011 No.05
Aluminum-doped Zinc Oxide (AZO) is considered as an excellent candidate to replace Indium Tin Oxide (ITO), which is widely used as transparent conductive oxide (TCO) for electronic devices such as liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and organic solar cells (OSCs). In the present study, AZO thin film was applied to the transparent electrode of a channel-shaped flexible organic solar cell using a low-temperature selective-area atomic layer deposition (ALD) process. AZO thin films were deposited on Poly-Ethylene-Naphthalate (PEN) substrates with Di-Ethyl-Zinc (DEZ) and Tri-Methyl-Aluminum (TMA) as precursors and H₂O as an oxidant for the atomic layer deposition at the deposition temperature of 130?C. The pulse time of TMA, DEZ and H₂O, and purge time were 0.1 second and 20 second, respectively. The electrical and optical properties of the AZO films were characterized as a function of film thickness. The 300 nm-thick AZO film grown on a PEN substrate exhibited sheet resistance of 87{Omega}/square and optical transmittance of 84.3% at a wavelength between 400 and 800 nm.
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