http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Effect of Proton Irradiation on Single-Walled Carbon Nanotubes Studied Using Raman Spectroscopy
성맹제,박준,S. J. Shin 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.4
We investigated single-walled carbon nanotubes (SWCNTs) under proton irradiation at various energies (1 ∽ 18 MeV) and doses (1.0 × 10-2 ∽ 1.0 × 10-7 nC/μm2) by using Raman spectroscopy. For a high-energy proton irradiation (∽18 MeV), no signicant change in the Raman spectra was observed after the proton irradiation. However, for low-energy proton irradiations (1 ∽ 6 MeV), some of the semiconducting SWCNTs exhibited an exceptional resistance to proton irradiation damage. A striking change in the relative Raman intensity of the D-band with respect to the Raman intensity of the G-band was also observed after the proton irradiation.
성맹제,Seong M.J. 한국진공학회 2006 Applied Science and Convergence Technology Vol.15 No.2
[ $GaAs_{1-x}N_{x}$ ]의 전도띠 바닥전자상태의 특성을 Ge 기판위에 성장시킨 $GaAs_{1-x}N_{x}(x{\leq}0.7)$ 박막에 대한 공명라만산란 실험을 수행함으로써 조사하였다. LO(longitudinal optical)-phonon 라만세기의 강한 공명상승이 $E_+$ 뿐만 아니라 $E_0$ 전이에너지 근처에서 관측되었다. 그러나 $E_+$ 전이에너지 아래와 근처에서 관측되는 분명한 LO-phonon 선폭 공명상승과 다양한 X와 L 영역경계 (zone-boundary) phonon의 활성화와는 대조적으로, $E_0$ 전이에너지 근처에서는 어떠한 LO-phonon 선폭 확장공명이나 날카로운 영역경계 phonon의 활성화가 관측되지 않았다. 관찰된 공명라만산란 결과는 GaAsN의 전도띠 바닥전자상태가 비국소화된 bulk GaAs와 거의 흡사한 ${\Gamma}$대칭 상태로 구성되었다는 사실을 의미한다. The symmetry of the conduction-band minimum of $GaAs_{1-x}N_{x}$ is probed by performing resonant Raman scattering (RRS) on thin layers of $GaAs_{1-x}N_{x}(x{\leq}0.7)$ epitaxially grown on Ge substrates. Strong resonance enhancement of the LO(longitudinal optical)-phonon Raman intensity is observed with excitation energies near the $E_0$ as well as $E_+$ transitions, However, in contrast to the distinct LO-phonon line-width resonance enhancement and activation of various X and L zone-boundary phonons brought about slightly below and near the $E_+$ transition, respectively, we have not observed any resonant LO-phonon line-width broadening or activation of sharp zone-boundary phonons near the $E_0$ transition. The observed RRS results reveal that the conduction-band minimum of GaAsN predominantly consists of the delocalized GaAs bulk-like states of ${\Gamma}$ symmetry.
Dispersion E±ciency of Carbon Nanotubes in Aqueous Solutions of Deoxycholate Sodium Salts
성맹제,박준 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.56 No.4
We have used Raman and PL spectroscopy in order to quantitatively estimate the abundance of isolated CNTs in as-sonicated samples in DOC aqueous solutions and the survival rate of isolated CNTs during an ultracentrifuge process. All the PL intensities in the as-sonicated samples increased almost linearly as the amount of CNTs in the 1 wt% DOC solution of 50 ml increased up to 10mg. The abundance of isolated CNTs in the as-sonicated samples was approximately 76%, and the survival rate of isolated CNTs during the ultracentrifuge process was ~50% on average.
Carbon Nanotubes on Line-Patterned Substrates: Raman Spectroscopy
박준,성맹제,정현식,H. C. Jo,J. Im,K. M. Kim,이민백,홍승훈,S. Myung 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.6
Single-walled carbon nanotubes, confined to lines of a few micron widths on line patterned substrates prepared via micro-contact printing, are studied using Raman spectroscopy. For the CNT tangential mode, the so-called G-band, the Raman intensity shows distinct anisotropy that changes with the polarization directions of the incident and the scattered photons. The anisotropy is more distinct for samples with line-patterns of narrower line-width, which indicates an increasing degree of CNT alignment along the patterned line direction with decreasing patterned line-width.
Functionalization of Graphene with Single-stranded DNA
심유민,성맹제 한국물리학회 2015 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.67 No.12
We have synthesized functionalized graphene by using direct dispersion of graphite flakes with single-stranded DNA in distilled water. The synthesized graphene-DNA complexes were investigated by using Raman spectroscopy, atomic force microscopy (AFM), transmission electron microscopy (TEM), and time-of-flight secondary-ion mass spectroscopy (TOF-SIMS). Raman spectra exhibited typical G-band and 2D-band signatures of graphene at 1590 cm−1 and 2700 cm−1, respectively. TOF-SIMS result showed that the graphene layers were successfully functionalized with singlestranded DNA. Mono-layer and few-layer graphene were identified by measuring the layer thickness by using AFM and by analyzing the electron diffraction patterns from TEM measurements.
계면활성제를 이용한 단층 탄소나노튜브 분리에 따른 라만과 Photoluminescence 연구
박준,성맹제,Park, June,Seong, Maeng-Je 한국진공학회 2008 Applied Science and Convergence Technology Vol.17 No.2
고립된 탄소나노튜브를 얻기 위해 계면활성제 Sodium Dodecyl Sulfate(SDS) 수용액에 단층 탄소나노튜브 분말을 넣어 초음파 처리를 하는 과정 중에 발생하는 물성 변화를 라만과 Photoluminescence를 통하여 연구하였다. 단층 탄소나노튜브(SWCNT) radial breathing mode(RBM)의 라만신호 세기의 변화는 SWCNT의 chirality에 따라 서로 다른 경향성을 보이고 초음파 처리 시간에 영향을 받음을 확인하였다. 또한 동일한 농도의 계면활성제에 담긴 SWCNT의 농도가 커지면 G-band 라만 진동수가 작아지면서 Photoluminescence 세기가 증가하는 현상을 관측하였다. We have studied, using Raman and photoluminescence (PL) spectroscopy, material property changes of single-walled carbon nanotubes (SWCNTs) dispersed in sodium dodecyl sulfate(SDS) aqueous solution by ultrasonication. Radial breathing mode Raman intensities of the dispersed SWCNTs shows different behavior depending on their chiralities as the sonication time increases. As the amount of SWCNTs dispersed in 1wt% SDS solution increases, both a downshift of the G-band Raman frequency and an enhancement in the PL intensity were observed.
Circularly Polarized Raman Study on Diamond Structure Crystals
이제호,김세라,성맹제 한국물리학회 2018 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.72 No.2
Circularly polarized Raman and/or photoluminescence (PL) analyses have recently been very important in studying physical properties of many layered materials that were either mechanically exfoliated or grown by chemical-vapor-deposition (CVD) on silicon substrates. Since silicon Raman signal is always accompanied by the circularly polarized Raman and/or PL signal from the layered materials, observation of proper circularly polarized Raman selection rules on silicon substrates would be extremely good indicator that the circularly polarized Raman and/or PL measurements on the layered materials were done properly. We have performed circularly polarized Raman measurements on silicon substrates and compared the results with the Raman intensities calculated by using Raman tensors of the diamond crystal structure. Our experimental results were in excellent agreement with the calculation. Similar circularly polarized Raman analysis done on germanium substrate also showed good agreement.