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MOCVD로 제작한 ZnO의 성장온도에 따른 특성 변화
서현석,정의혁,조중열,최연익,서오권,Seo Hyun-Seok,Jeong Eui-Hyuk,Jo Jung-Yol,Choi Yearn-Ik,Seo O-Gweon 한국반도체디스플레이기술학회 2005 반도체디스플레이기술학회지 Vol.4 No.4
Characteristics of ZnO films grown on $Si-SiO_2$ substrates at temperatures of $200\sim400^{\circ}C$ by metalorganic chemical vapor deposition were investigated. The growth rates and mobilities of ZnO films were dependent on growth temperatures. The field-effect mobilities measured in thin-film transistor structure were $15cm^2/Vsec$.