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EFG법에 의한 Sapphire Ribbon 단결정 성장
박신서,류두형,정재우,최종건,오근호,손선기,변영재,전형탁 한국세라믹학회 1990 한국세라믹학회지 Vol.27 No.6
Shaped crystal growth apparatus were made for sapphire ribbon single crystal growth. Sapphire ribbon single crystal are grown by EFG(Edge-defined Film-fed Growth) methdo for use as watch-glass and SOS(Silicon-On-Sapphire) devices. Sapphire ribbon crystals were grown to be 40min wide, 1.8mm thick, 96mm long. Therelationshiops between growth striation and surface roughness, with various growth rates, were investigated and compared. It was found that sapphire ribbon crystal is suitable for watch-glass by measuring the transmittance in the visible light region.
19Cr-Ti 페라이트계 스테인리스강의 산화피막 밀착성에 미치는 Si 계면산화물의 영향
박수호,이용득,이윤용,류두형 대한금속재료학회(대한금속학회) 1998 대한금속·재료학회지 Vol.36 No.9
The effect of Si addition on the scale adhesion of 19Cr-Ti ferritic stainless steel, which is used for stud pin as a sealing material for cathode ray tube, has been studied by using press compression test, visual inspection, optical micrograph and electronic microanalysis. A spalling behavior of scale formed on the surface by oxidation treatment at 1100℃ for 30∼40 minutes in 75%H₂+25%N₂ gas mixtures was mainly governed by the morphology of SiO₂ layer formed at scale/metal interface. As Si content exceeded more than 0.5%, a continuous silica interlayer was produced and then the adhesion of scale which is mainly 2∼4㎛ thickness of Cr-oxide layer was abruptly decreased. It is due to a low fracture toughness of SiO₂ formed at scale/metal interface and a generation of residual stress at scale/metal interface during cooling after oxidation treatment. The residual stress might originate from a great discrepancy in thermal expansion coefficient between matrix and silica.