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무수 불화수소와 메탄올의 기상식각에 의한 실리콘 표면 미세 가공
장원익,최창억,이창승,홍윤식,이종현,백종태,김보우 ( W . I . Jang,C . A . Choi,C . S . Lee,Y . S . Hong,J . H . Lee,J . T . Baek,B . W . Kim ) 한국센서학회 1998 센서학회지 Vol.7 No.1
In silicon surface micro-machining, the newly developed GPE(gas-phase etching) process was verified as a very effective method for the release of highly compliant micro-structures. The developed GPE system with anhydrous HF gas and CH₃OH vapor was characterized and the selective etching properties of sacrificial layers to release silicon micro-structures were discussed. P-doped polysilicon and SOI(silicon on insulator) substrate were used as a structural layer and TEOS(tetraethyorthosilicate) oxide, thermal oxide and LTO(low temperature oxide) as a sacrificial layer. Compared with conventional wet-release, we successfully fabricated micro-structures with virtually no process-induced suction and residual product.