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용융염 합성법으로 제조한 PZN-PNN-PT-PZ계 압전세라믹스의 전기적 특성
어수해,이기태 한국전기전자재료학회 1996 電氣電子材料學會誌 Vol.9 No.4
The quartemary system ceramics 0.5[xPb(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$-(1-x)Pb(Ni$_{1}$3/Nb$_{2}$3/)O$_{3}$]-0.5[yPbTiO$_{3}$-(1-y) PbZrO$_{3}$ for piezoelectric actuators were prepared bv the were added to the raw materials up to 5 mole. Sintering temperature was varied form 1000.deg. C to 1200.deg. C. Sintering characteristrics, dielectric and piezoelectric properties were then investigated. Piezoelectric properties of sample prepared by the molten salt method were improved compared to those prepared by the conventional method. Addition of PZN shifted morphotropic phase boundary to more Zr-rich composition and decreased the piezoelectric properties.
MOS Capacitance의 酸化膜 두께의 溫度依存性에 관한 實驗的 硏究
어수해 영남이공대학 1984 論文集 Vol.13 No.-
The capacitance-voltage (C-V) characteristics of Si-SiO₂ metal structure(p-type) have been measured in the temperature region of -20℃ to 210℃ at a fixed frequency of 1KHz. The samples were made by LPCVD process and site 4.17×4.17mil². Those were observed that capacitance were worked many changes at thin SiO₂ film in low temperature(under 120℃) but many changes at thick SiO₂ film(2700Å) in high temperature(over 200℃).