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Forming Gas Post Metallization Annealing of Recessed AlGaN/GaN-on-Si MOSHFET
이정연,박봉렬,이재길,임종태,차호영 대한전자공학회 2015 Journal of semiconductor technology and science Vol.15 No.1
In this study, the effects of forming gas post metallization annealing (PMA) on recessed AlGaN/GaN-on-Si MOSHFET were investigated. The device employed an ICPCVD SiO2 film as a gate oxide layer on which a Ni/Au gate was evaporated. The PMA process was carried out at 350oC in forming gas ambient. It was found that the device instability was improved with significant reduction in interface trap density by forming gas PMA.