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두께에 따른 비정질 칼코게나이드 Ag/As₄?Ge₁?Se₁?S₃? 박막의 홀로그래피 데이터 격자형성
余哲浩(Chul-Ho Yeo),鄭鴻倍(Hong-Bay Chung) 대한전기학회 2006 전기학회논문지C Vol.55 No.8
The Ag photodoping effect in amorphous As₄?Ge₁?Se₁?S₃? chalcogenide thin films for holographic recording has been investigated using a He-Ne laser (λ=632.8 ㎚). The chalcogenide films thickness prepared in the present work were thinner in comparison with the penetration depth of recording light (d<SUB>p</SUB>=l.66 ㎛). It exhibits a tendency of the variation of the diffraction efficiency (η) in amorphous chalcogende films, independently of the Ag photodoping. That is, η increases rapidly at the beginning of the recording process and reaches the maximum (η<SUB>max</SUB>) and slowly decreases slowly with the exposed time. In addition, the value of η<SUB>max</SUB> depends strongly on chalcogenide film thickness(d) and its maximum peak among the films with d = 40, 80, 150, 300, and 633 ㎚ is observed 0.083% at d = 150 ㎚ (approximately 1/2 Δn), where Δn is the refractive index of chalcogenide thin film (Δn=2.0). The η is largely enhanced by Ag photodoping into the chalcogenides. In particular, the value of η<SUB>max</SUB> in a bilayer of 10-㎚-thick Ag/150-㎚-thick As₄?Ge₁?Se₁?S₃? film is about 1.6%, which corresponds to ~ 20 times larger than that of the single-layer As₄?Ge₁?Se₁?S₃? thin film (without Ag). And we obtained the diffraction pattern according to the formation of (P:P) polarization holographic grating using Mask pattern and SLM.