虹彩 體質 分析에서 心腎結合組織의 虛弱 體質과 高血壓 家族歷과 관련성 硏究

金鐘牛,黃祐準,琴坰樹,李始炯,李宗淳,都金錄,趙在運,趙州掌,金鐘煜 한국전통의학연구소 2002 한국전통의학지 Vol.12 No.1

Iridology, developed more than 100 years ago, is the diagnosis of medical conditions through noting irregularities of the pigmentation in the iris The purpose of this study is to compare interrelation between CVA, hypertension family history and cardio-renal connective tissue in Iris Constitution through iris constitution examination. The subjects consist of 114 patients who were examined in Iris Constitution at Chonju Oriental Medicine Hospital attached to Wonkwang Univ. from September. 1St. 2000 to August. 31th. 2002. 1. In the distribution of Iris Constitution, among of 79cases, There are neurogenic type 13cases, abdominal connective tissue weakness constitution 31 cases, cardio-renal connective tissue weakness constitution 6 cases, cholesterol 7 cases and others 22 case in control group. 2. There are familial history of CVA and hypertention 32 cases, no familial history of CVA and hypertention1 3 cases, in 35cases of experimental group. These results imply that there is meaningfulness of interrelation between cardio-renal connective tissue weakness constitution and. CVA, hypertention.

二十一世紀의 敎育

李鍾祿 圓光大學校 師範大學 敎育學科 1985 圓光敎育 Vol.2 No.-

非晶質 AsGeSe_χ 필름의 電氣傳導度의 Se濃度依存性

이종록 梨花女子大學校 韓國生活科學硏究院 1991 韓國生活科學硏究院 論叢 Vol.47 No.-

D.C. electrical conductivity on amorphous AsGeSex film for the Se concentrations of 52.2, 55.6, 63.6, 79 at.% is investigated. The thin film samples are prepared by the thermal evaporation form bulk material obtained by melt quenching. D.C. conductivity is proportional to inverse of temperature and satisfies the relation σ=σ_0 exp(-△Ea/kT). Over the temperature range from about 230K∼370K, the D.C. conductivities of the investigated samples are between 2.5×10 exp(-9)(Ω^-1em^-1) to 7.0×10 exp(-13)(Ω^-1 cm^-1). D.C. conductivty increases with increases of Se concentration. And the activation energy of conductivity decrease with increase of Se concentration.

Ag 가 첨가된 비정질 유리반도체 As_2S_3의 물리적 특성

이종록,桂善姬 梨花女子大學校 韓國生活科學硏究院 1987 韓國生活科學硏究院 論叢 Vol.40 No.-

비정질 유리 반도체 As_2S_3에 Ag를 0, 5.7, 9.1, 12. at%로 첨가하여 thermal evaporation방법으로 박막 시료를 만들어 직류 전기 전도도, 광 흡수도를 측정하였다. X선 회절 실험 결과 각 시료는 비정질임이 확인되었다. 273K에서 373K 온도 영역에서의 직류전기 전도도는 7.04x10^-17(Ω^-1cm^-1)에서 8.66x10^-12(Ω^-1cm^-1_의 값을 나타내며 Ag의 농도가 증가함에 따라 직류 전기 전도도는 증가하였다. 직류 전기 전도도는 σ=σ_0exp(-ΔE_α/KT)의 관계식을 만족하고 광학적 에너지 gap은 Ag의 농도가 증가함에 따라 2.34, 2.12, 1.89, 1.78eV로 감소하였다. E_-ΔE_α의 값은 Ag의 농도에 관계없이 거의 일정하였다. D.C. electrical conductivity, optical absorption experiments on glassy semiconductor As_2S_3+Ag for which the Ag concentration is 0, 5.7, 9.1, 12.3 at. % are investigated. The thin film samples are prepared by the thermal evaporation method. From the result of X-ray diffraction experiment, it was convinced that each sample was amorphous semiconductor. Over the temperature range from 273˚K to 373˚K, the d.c. conductivity of the investigated samples is 8.66x10^-12(Ω^-1cm^-1)∼7.04c10^-17(Ω^-1cm^-1). As Ag concentration increases, the electrical d.c. conductivity increases. D.C. conductivities are proportional to inverse of temperature and satisfy the relation σ=σ_0exp(-ΔE_α/KT). The optical energy gap decreases with the Ag concentration having the value of the range from 2.34eV to 1.79eV. It is also shown that the value of difference E_g-ΔE_α is independent of Ag concentration.

일반화가능도 이론에 따른 체온, 혈압, 안정시심박수 검사의 신뢰도 추정

이종영,이상록 한국스포츠리서치 2003 한국 스포츠 리서치 Vol.14 No.1

The purpose of this research is to measure body temperature, blood pressure, and resting heart rate according to the generalizability theory. This project's researchers are senior nursing students who have much experience in the measurement of body temperature, blood pressure, and resting heart rate. The control subjects for this research are seventy students who are studying sport and leisure at Daejeon University in Daejeon. According to the generalizability theory, research was carried out in three main areas and the model used by the researchers was P×Ra×(Tr : Ti). The results of the GENOVA program which support the theory are outlined below. First, the variance of body temperature in the test was 99.9%. The generalizability coeffcient for changes in body temperature of a control subject was over .99 when measured at rest, outside of test times. Second, the variance in systolic blood pressure of the control subjects during the test were found to have high percentages. The generalizability coeffcient of systolic blood pressure of a control subject was over .93 when measured at rest, outside of test times. Third, the variance in diastolic blood pressure within the control subjects during the test has fairly high percentages. The generalizability coeffcient of diastolic blood pressure of control subjects was over .89 when measured outside of test times, at rest. Fourth, the variance in resting heart rate of the control subjects during the test has relatively high percentages. The generalizability coeffcient of the resting heart rate of control subjects was over .96 when measured outside of test times and at rest. Therefore, when using the generalizability theory, an examiner who has much experience in the measurement of temperature, blood pressure, and resting heart rate can have confidence about the test result. The purpose of the generalizability theory is to design a test in which we can have more confidence and to eventually explain the cause of many errors within the current testing method. Indeed. we need to have high confidence when measuring changes in the body physiology of control subjects in the physical education field.

非晶質 유리半導體 As-Te-Ga系의 電氣的 및 光學的 特性

이종록,柳善玉 梨花女子大學校 韓國生活科學硏究院 1988 韓國生活科學硏究院 論叢 Vol.41 No.-

3성분계 비정질 유리 반도체 As-Te-Ga 계에서 Ga을 0,5,10,15 at.%의 비로 첨가하여서 bulk시료를 만든 후에 thermal evaporation 방법에 의해서 박막 시료를 만들어 직류 전기 전도도와 광 흡수도를 측정하였다. X-선 회절 실험에 의해서 각 시료는 비정질임이 확인되었다. 직류 전기 전도도는 약 200K에서 350K의 온도범위에서 1/T에 비례하며 σ=σ_0exp(-ΔE_a/kT)의 관계식을 만족한다. 이 온도 범위에서 그 값은 1.2×10^-2(Ω^-2cm^-1)∼1.4×10^-7(Ω^-1cm^-1)을 나타내며 Ga의 농도가 증가함에 따라서 그 값은 증가한다. 또한 Ga의 농도가 증가함에 따라 전도도의 활성화 에너지는 감소한다. 광학적 에너지 gap은 Ga의 농도가 증가함에 따라 0.81eV에서 0.64eV로 감소한다. 광학적 에너지 gap과 활성화 에너지의 차는 Ga의 농도에 관계없이 일정하다. Dc conductivity and optical absorption coefficient of glassy semiconductors As-Te-Ga system are measured as a function of Ga content up to 15 at. %. The thin film samples are prepared by the thermal evaporation form bulk material obtained by melt quenching. By the result of X-ray diffraction experiment, it is convinced that all samples are confirmed as amorphous semiconductor. Dc conductivities are proportional to inverse of temperature and satisfied the relation σ=σ_0exp(-ΔE_a/kT). Over the temperature range from about 200K to 350K, the dc conductivity of the investigated samples are 1.2×10^-2(Ω^-2cm^-1)∼1.4×10^-7(Ω^-1cm^-1). Dc conductivity increases with increase of Ga concentration. And the activation energy of conductivity decreases with increase of Ga concentration, the optical energy gap E^opt_g decrease with the Ga concentration having the value of the range. It is also shown that the value of difference E^opt_g-ΔE_a is independent of Ga concentration.

세라믹 초전도체 YBa_(2-X)Ca_(X)Cu_(3)O_(7-Y)의 특성 비교

이종록,정병두,김민경 梨花女子大學校 韓國生活科學硏究院 1993 韓國生活科學硏究院 論叢 Vol.52 No.-

Ceramic superconductors YBa_(2-X)(A)_(S)Cu_(3)O_(7-Y), where A=Ca or Sr, were made for several different values of X X-ray powder diffraction, SEM, magnetigation, and resistivity versus temperature measurements were carried out to study the effects of Ca and Sr substitutions into 1:2:3 type superconductors on the superconducting characteristics. Both ca and Sr substitutions were observed to observed to suppress the critcal temperatuse strongly, but Sr substitution seems to the more effective in the suppression mechanism. The decrease of Tc seems to be due to the change in oxygen concentration induced by the Ca and/or Sr substitution. This implies that the variation of critical temperature has close relation with that of mobile hole concentration in the Cu-O planes.

Blumlein回路에 의한 窒素 laser 製作 및 特性에 관한 硏究

이종록,金珠景 梨花女子大學校 韓國生活科學硏究院 1982 韓國生活科學硏究院 論叢 Vol.29 No.-

Blumlein 전송회로를 이용한 횡여기 방식의 UV-질소 laser를 설계하고, 국내에서 생산된 전자회로용 양면기판을 사용하여 제작하였다. 본 실험에서 제작된 laser radiation은 일정성을 갖는 방전에서 생성되며, laser광의 중요한 특성인 발산성은 수평방향이 4.7m-㎭ 이다. laser cavity 는 길이 860 ㎚, 너비 7.5 ㎜로 E/p??110V/㎝·torr에서 최적발견조건을 이룬다. An ultra-violet nitrogen laser which can be transeversely excited has been designed and constructed using a Blumlein transmission line made of a laminated copper-epoxy/glass-copper of square configuration. The laser radiation has uniformity and a beam divergence along the horizontal direction 4.7 m-rad. The laser cavity is 860 ㎜ long and 7.5 ㎜ wide, and gives a maximum power output at about 110 V/㎝-torr, which ih the value of optimum condition of E/P for the nitrogen laser constructed in our experiment.

水素化된 非晶質 硅素의 定常狀態 光電氣 傳導度(Numerical Analysis)

이종록,孫承希,張震 梨花女子大學校 韓國生活科學硏究院 1989 韓國生活科學硏究院 論叢 Vol.43 No.-

수소화된 비정질 규소의 재결합 과정을 연구하는 방법으로 광전기 전도도의 측정이 있다. 광전기 전도도의 온도 의존성과 조사광 세기에 대한 실험결과를 설명하기 위해 수치적인 방법을 통한 광전기 전도도의 계산이 많이 행해졌다. 본 논문에서는 Rose의 재결합 model과 gap state에 대해 acceptorlike, donorlike한 지수함수 모양의 tail을 가정하고 midgap 근처에는 Gaussian 분포를 가진 dangling bond를 고려하여 simmons. Taylor의 일반화된 비율 방정식을 수치적으로 풀어 광전기 전도도를 구한다. 근사식을 전혀 사용하지 않고 dangling bond의 점유함수를 그대로 계산에 적용, 광전기 전도도의 온도와 조사광 세기에 대한 의존성을 조사하여 이를 실험 결과와 비교 분석하고 재결합 과정에 대해 고찰하였다. 계산에 의하면 dangling bond state의 위치는 전도대로부터 1.1-1.2eV, 유효 상호 관련 에너지는 0.4eV, 폭과 최대 밀도는 각각 0.05-0.1eV, 5×10^15-1×10^16cm^-3eV^-1일 때 실험 결과에서 나타나는 상온 근처의 thermal quenching 현상을 설명할 수 있다. Steady state photoconductivity(PC) in a-Si : H films has been calculated to explain the experimental results such as temperature dependence and illumination light intensity dependence of PC and to investigate the recombination process. In this model, recombination via exponentially distributed band tail states and Gaussian form of dangling bond states was included. The appropriate statistics for correlated defects and the Simmons-Taylor theory are used to obtain a parametrical representation of PC versus photogeneration rate and PC is calculated without any approximations. The position, width of dangling bond states, effective correlation energy and profile of tail states etc. were estimated, and the thermal quenching effect could be shown so remarkably at certain conditions. A very good agreement with the experimental result has been obtained.

非晶質半導體 P-Ge-Se系의 光學的 特性

이종록 梨花女子大學校 韓國生活科學硏究院 1992 韓國生活科學硏究院 論叢 Vol.49 No.-

The photostructure of amorphous semiconductor PGeSe_χ for which Se concentration is 50, 60, 70, 80, at% were investigated. The thin film samples were prepared by the thermal evaporation method. After the thin film which were illuminated and annealed, the X-ray diffraction pattern, the absorption coefficient, the band gap energy and the SEM picture were studied. When the thin film were illuminated and annealed, the aborption coefficients were found to increase and the band gap energy to decrease. Also we could find the photodarkening and the thermaldarkening from the experimental results. From the SEM study, the amorphous thin films, which were illuminated and annealed, were found to separate into two diffferent phases.